- Resolution: 320×240; 12µm pixel pitch
- NETD (Noise Equivalent Temperature Difference): f/1, 300 K scene, 20°C ambient for ATI320S version: <60mK
- Scene dynamic >100°C
- Operating T°C range: -40°C; +85°C
- Full digital product with power consumption <400mW, when an image signal processing is fully activated
- Frame rate: 60Hz
- Standards compliance: Mil-Std-810/883
- Weight: <3g for ATI320S version; <7g for ATI320L version
Lists
Tuesday, August 31, 2021
Lynred Integrates ISP onto Microbolometric Sensor
Galaxycore History
Monday, August 30, 2021
GPixel Unveils 4/3-inch 10MP 2,000fps Global Shutter Sensor
Gpixel announces a high-speed global shutter sensor, GSPRINT4510, a new member of GSPRINT series targeting high speed applications.
GSPRINT4510 is a 10MP 4/3” (22.9mm) sensor based on 4.5 µm charge domain global shutter pixel. It has more than 30 ke- full well and less than 3 e- rms read noise. Using an advanced 65 nm CIS process with light pipe technology, the sensor achieves >65% QE and more than 1/40,000 shutter efficiency. With on-chip charge binning, full well capacity can be further increased and frame rate is almost quadrupled.
GSPRINT4510 will be offered in two variants to support in the most optimal way different end-use use cases. One version is dedicated to 3D laser profiling and supports 144 pairs sub-LVDS channels running at 1.2Gbps each, which delivers 2000 fps in 8-bit operation at 2048 rows and >3500 fps with an ROI of 1024 rows in combination with several HDR modes. Incorporating a thinner glass lid to reduce stray light reflection, the option to have no micro lenses, and either a sealed or removable glass lid makes GSPRINT4510 a good solution for 3D laser scanning applications.
For other applications including high-speed industrial inspection, life science imaging and 4K video applications, the sensor is offered in monochrome, color and achieve up to 500 fps @ 12-bit, 1008 fps @ 10-bit and 1928 fps @ 8-bit with full resolution. On-chip 2×2 charge binning can boost frame rates more than x3 with a full well charge increase to 120 ke-. Flexible output channel multiplex modes make it possible to reduce frame and data rate to make it compatible with all available camera interface options. This version of the sensor incorporates micro lenses and a sealed glass lid making GSPRINT4510 a good choice for many applications such as 4/3”(MFT) format global shutter cameras in slow motion capture or drone-mounted videography.
Both versions of GSPRINT4510 are packaged in a 454-pin uPGA ceramic package which is pin-compatible with GSPRINT4521. GSPRINT4510 monochrome engineering samples can be ordered today for delivery in October 2021.
Sunday, August 29, 2021
Hamamatsu Presents Position-Detecting Computational Sensor
Saturday, August 28, 2021
New Kasalis Active Alignment Machine Features 5nm Resolution
Friday, August 27, 2021
Hamamatsu Explains its Photon-Resolving Sensor to Uninitiated
Hamamatsu publishes a popular explanation of its photon number resolving Quest camera advantages:
SWIR Quantum Dot PDs Has 80% QE and 10ns Response Time, but High Dark Current
Thursday, August 26, 2021
Quantum Dot Progress Review
Sony Automotive Sensors Development Began as an Application for Security Image Sensor, but Automotive Requirements Turned to be Unprecedentedly Stringent
Wednesday, August 25, 2021
Ex-Tower Fellow Assaf Lahav Joins GPixel
University of Colorado Boulder Achieves ToF Sensing with 26um Depth Accuracy
Ouster CEO Believes that Only 3 to 5 LiDAR Companies Remain in 5 Years from Now
Tuesday, August 24, 2021
Coherent ToF Imager with 250um Depth Resolution
Fight of Velodyne with its Founder Continues
New Videos: Omnivision, ST, Glasgow and Heriot-Watt Universities, Robosense, Immervision
Monday, August 23, 2021
ON Semi Global Shutter Sensor Wins Most Innovative Value Product Award
ON Semi global shutter AR0234CS 2.3 MP CMOS sensor has won a Most Innovative Value Product Award from the 2021 China AI Outstanding Innovation Awards program. The selection criteria for all nominated products include online voting and expert review.
The AR0234CS is 1080p 120fps sensor with 3um pixels, HDR support, and MIPI and parallel interfaces.
Renesas Updates its 8MP Sensor Lineup
Sunday, August 22, 2021
Omnivision Improves its Gross Margin to 31.37%
- Omnivision's business accounts for 74% of Will Semi revenue
- Omnivision and Superpix subsidiaries account for 77% of the total Will Semi revenue
- CMOS sensors gross profit margin have risen to 31.37% in 2021
- The cost structure of the company's CMOS image sensor:
55.09% - wafer cost
6.01% - color filters
10.19% - packaging and testing
1.4% - other expenses
This does not add up to 100%. Not sure why. - Camera module cost structure:
52% - image sensor
20% - lens
19% - module packaging
6% - motors
3% - IR filter
Saturday, August 21, 2021
Smartsens Announces 1MP Automotive Sensor
SmartSens announces the SC1336, a 1/3-inch 1MP CMOS sensor for automotive applications, such as front-view cameras and surround view systems.
The new product uses SmartSens’ DSI-2 pixel with sensitivity of 12448 mV/lux·s. It also features PixGain technology and provides 11000 e- FWC.
The SC1336 comes in a 35-Pin CSP package and is currently available for sampling. It is expected to enter mass production in Q3 of 2021.
Friday, August 20, 2021
Michael Tompsett: My Story of Imaging Inventions
Thursday, August 19, 2021
GalaxyCore CEO Becomes a Multi-Billionaire
- Galaxycore's sensors are produced with a smaller number of masks and optimized pixel process, greatly reducing costs
- The company has developed a unique COM packaging and a COF-like design, which are different from the mainstream of the industry
- Galaxycore uses a low-cost three metal layers process
- Through the incremental improvements of the design, the chip area is reduced, achieving a more lean cost
Intel Spokesperson: Realsense Business is Winding Down
Friday, August 13, 2021
Paper on QE Improvement with Surface Textures
3rd Order Sigma-Delta ADC for Image Sensor
Thursday, August 12, 2021
Plasmonic Anti-Reflection Layer
OSA Optics Express publishes a paper "Broadband responsivity enhancement of Si photodiodes by a plasmonic antireflection bilayer" by Jongcheol Park, Il-Suk Kang, Gapseop Sim, Tae Hyun Kim, and Jong-Kwon Lee from National NanoFab Center and Cheongju University, Korea.
"Randomly distributed plasmonic Ag nanoparticles (NPs) with various sizes were fabricated by a reflow process to an island-shaped Ag thin-film deposited on a Si photodiode. These NPs conformally enclosed by an antireflective (AR)-type SiNx/SiO2 bilayer reveal significantly diminished reflectance in a broad wavelength (500 nm - 1100 nm) as compared to the cases of Ag NPs or SiO2 layer enclosing Ag NPs on the Si substrate. Accordingly, the forward scattering and the total reflection along with wide-angle interference in between the dielectric bilayer incorporating the Ag NPs induce highly increased light absorption in the Si substrate. The fabricated Si photodiode adopting the plasmonic AR bilayer shows the responsivity peak value of 0.72 A/W at 835 nm wavelength and significant responsivity enhancement up to 40% relative to a bare Si photodiode in a wavelength range of 500 nm to 1000 nm."