The 2025 International Image Sensor Workshop (IISW) provides a biennial opportunity to present innovative work in the area of solid-state image sensors and share new results with the image sensor community. The event is intended for image sensor technologists; in order to encourage attendee interaction and a shared experience, attendance is limited, with strong acceptance preference given to workshop presenters. As is the tradition, the 2025 workshop will emphasize an open exchange of information among participants in an informal, secluded setting beside the Awaji Island in Hyōgo, Japan.
The scope of the workshop includes all aspects of electronic image sensor design and development. In addition to regular oral and poster papers, the workshop will include invited talks and announcement of International Image Sensors Society (IISS) Award winners.
Submission of abstracts: An abstract should consist of a single page of maximum 500-words text with up to two pages of illustrations (3 pages maximum), and include authors’ name(s), affiliation, mailing address, telephone number, and e-mail address.
The Walter Kosonocky Award is presented biennially for THE BEST PAPER presented in any venue during the prior two years representing significant advancement in solid-state image sensors. The award commemorates the many important contributions made by the late Dr. Walter Kosonocky to the field of solid-state image sensors. Personal tributes to Dr. Kosonocky appeared in the IEEE Transactions on Electron Devices in 1997. Founded in 1997 by his colleagues in industry, government and academia, the award is also funded by proceeds from the International Image Sensor Workshop.
The award is selected from nominated papers by the Walter Kosonocky Award Committee, announced and presented at the International Image Sensor Workshop (IISW), and sponsored by the International Image Sensor Society (IISS). The winner is presented with a certificate, complementary registration to the IISW, and an honorarium.
Please send us an email nomination for this year's award, with a pdf file of the nominated paper (that you judge is the best paper published/ presented in calendar years 2023 and 2024) as well as a brief description(less than 100 words) of your reason nominating the paper. Nomination of a paper from your company/ institute is also welcome.
The deadline for receiving nominations is January 15th, 2025.
Your nominations should be sent to Yusuke Oike (2025nominations@imagesensors.org), Secretary of the IISS Award Committee.
Here are some image-sensor specific sessions and talks:
Wednesday Nov 20, 2024 Session Title: Superconducting Photon Detectors 1 Chair: Dmitry Morozov 4:40 PM - 5:10 PM Demonstration of a 400,000 pixel superconducting single-photon camera Invited Speaker - Adam McCaughan - National Institute of Standards and Technology (NIST) 5:10 PM - 5:15 PM Company Symposium: Photon Spot Platinum Sponsor Speaker: Vikas Anant 5:15 PM - 5:30 PM Development of Superconducting Wide Strip Photon Detector Paper Number: 112 Speaker: Shigehito Miki - National Institute of Information and Communications Technology (NICT) 5:30 PM - 5:45 PM Superconducting nanowire single photon detectors arrays for quantum optics Paper Number: 34 Speaker: Val Zwiller - KTH Royal Institute of Technology 5:45 PM - 6:00 PM Single photon detection up to 2 µm in pair of parallel microstrips based on NbRe ultrathin films Paper Number: 80 Speaker: Loredana Parlato - University of Naples Federico II 6:00 PM - 6:15 PM Reading out SNSPDs with Opto-Electronic Converters Paper Number: 87 Speaker: Frederik Thiele - Paderborn Univeristy 6:15 PM - 6:30 PM Development of Mid to Far-Infrared Superconducting Nanowire Single Photon Detectors Paper Number: 195 Speaker: Sahil Patel - California Institute Of Technology
Thursday Nov 21, 2024 Session Title: Superconducting Photon Detectors 2 Chair: Martin J Stevens 8:30 AM - 8:45 AM Opportunities and challenges for photon-number resolution with SNSPDs Paper Number: 148 Speaker: Giovanni V Resta - ID Quantique 8:45 AM - 9:00 AM Detecting molecules at the quantum yield limit for mass spectroscopy with arrays of NbTiN superconducting nanowire detectors Paper Number: 61 Speaker: Ronan Gourgues - Single Quantum 9:00 AM - 9:30 AM Current state of SNSPD arrays for deep space optical communication Invited Speaker - Emma E Wollman - California Institute Of Technology 9:30 AM - 9:35 AM Company Symposium: Quantum Opus/MPD presentation Platinum Sponsors 9:35 AM - 9:50 AM Novel kinetic inductance current sensor for transition-edge sensor readout Paper Number:238 Speaker: Paul Szypryt - National Institute of Standards and Technology (NIST) 9:50 AM - 10:05 AM Quantum detector tomography for high-Tc SNSPDs Paper Number: 117 Speaker: Mariia Sidorova - Humboldt University of Berlin 10:05 AM - 10:20 AM Enhanced sensitivity and system integration for infrared waveguide-integrated superconducting nanowire single-photon detectors Paper Number: 197 Speaker: Adan Azem - University Of British Columbia
Thursday Nov 21, 2024 Session Title: SPADs 1 Chair: Chee Hing Tan 11:00 AM - 11:30 AM A 3D-stacked SPAD Imager with Pixel-parallel Computation for Diffuse Correlation Spectroscopy Invited Speaker - Robert Henderson - University of Edinburgh 11:30 AM - 11:45 AM High temporal resolution 32 x 1 SPAD array module with 8 on-chip 6 ps TDCs Paper Number: 182 Speaker: Chiara Carnati - Politecnico Di Milano 11:45 AM - 12:00 PM A 472 x 456 SPAD Array with In-Pixel Temporal Correlation Capability and Address-Based Readout for Quantum Ghost Imaging Applications Paper Number: 186 Speaker :Massimo Gandola - Fondazione Bruno Kessler 12:00 PM - 12:15 PM High Performance Time-to-Digital Converter for SPAD-based Single-Photon Counting applications Paper Number: 181 Speaker: Davide Moschella - Politecnico Di Milano 12:15 PM - 12:30 PM A femtosecond-laser-written programmable photonic circuit directly interfaced to a silicon SPAD array Paper Number: 271 Speaker: Francesco Ceccarelli - The Istituto di Fotonica e Nanotecnologie (CNR-IFN)
Thursday Nov 21, 2024 Session Title: SPADs 2 Chair: Alberto Tosi 2:00 PM - 2:30 PM Ge-on-Si Technology Enabled SWIR Single-Photon Detection Invited Speaker - Neil Na - Artilux 2:30 PM - 2:45 PM The development of pseudo-planar Ge-on-Si single-photon avalanche diode detectors for photon detection in the short-wave infrared spectral region Paper Number: 254 Speaker: Lisa Saalbach - Heriot-Watt University 2:45 PM - 3:00 PM Hybrid integration of InGaAs/InP single photon avalanche diodes array and silicon photonics chip Paper Number: 64 Speaker: Xiaosong Ren - Tsinghua University 3:00 PM - 3:15 PM Dark Current and Dark Count Rate Dependence on Anode Geometry of InGaAs/InP Single-Photon Avalanche Diodes Paper Number: 248 Speaker: Rosemary Scowen - Toshiba Research Europe 3:15 PM - 3:30 PM Compact SAG-based InGaAs/InP SPAD for 1550nm photon counting Paper Number: 111 Speaker: Ekin Kizilkan - École Polytechnique Fédérale de Lausanne (EPFL)
Thursday Nov 21, 2024 Session Title: Single-photon Imaging and Sensing 1 Chair: Aurora Maccarone 4:15 PM - 4:45 PM Single Photon LIDAR goes long Range Invited Speaker - Feihu Xu - USTC China 4:45 PM - 5:00 PM The Deep Space Optical Communication Photon Counting Camera Paper Number: 11 Speaker: Alex McIntosh - MIT Lincoln Laboratory 5:00 PM - 5:15 PM Human activity recognition with Single-Photon LiDAR at 300 m range Paper Number: 232 Speaker: Sandor Plosz - Heriot-Watt University 5:15 PM - 5:30 PM Detection Times Improve Reflectivity Estimation in Single-Photon Lidar Paper Number: 273 Speaker: Joshua Rapp - Mitsubishi Electric Research Laboratories 5:30 PM - 5:45 PM Bayesian Neuromorphic Imaging for Single-Photon LiDAR Paper Number: 57 Speaker: Dan Yao - Heriot-Watt University 5:45 PM - 6:00 PM Single Photon FMCW LIDAR for Vibrational Sensing and Imaging Paper Number: 23 Speaker: Theodor Staffas - KTH Royal Institute of Technology
Friday Nov 22, 2024 Session Title: Single-photon Imaging 2 9:00 AM - 9:15 AM Quantum-inspired Rangefinding for Daytime Noise Resistance Paper Number:208 Speaker: Weijie Nie - University of Bristol 9:15 AM - 9:30 AM High resolution long range 3D imaging with ultra-low timing jitter superconducting nanowire single-photon detectors Paper Number: 296 Speaker: Aongus McCarthy - Heriot-Watt University 9:30 AM - 9:45 AM A high-dimensional imaging system based on an SNSPD spectrometer and computational imaging Paper Number: 62 Speaker: Mingzhong Hu - Tsinghua University 9:45 AM - 10:00 AM Single-photon detection techniques for real-time underwater three-dimensional imaging Paper Number: 289 Speaker: Aurora Maccarone - Heriot-Watt University 10:00 AM - 10:15 AM Photon-counting measurement of singlet oxygen luminescence generated from PPIX photosensitizer in biological media Paper Number: 249 Speaker: Vikas - University of Glasgow 10:15 AM - 10:30 AM A Plug and Play Algorithm for 3D Video Super-Resolution of single-photon data Paper Number:297 Speaker: Alice Ruget - Heriot-Watt University
Friday Nov 22, 2024 Session Title: Single-photon Imaging and Sensing 2 11:00 AM - 11:30 AM Hyperspectral Imaging with Mid-IR Undetected Photons Invited Speaker - Sven Ramelow - Humboldt University of Berlin 11:30 AM - 11:45 AM 16-band Single-photon imaging based on Fabry-Perot Resonance Paper Number: 35 Speaker: Chufan Zhou - École Polytechnique Fédérale de Lausanne (EPFL) 11:45 AM - 12:00 PM High-frame-rate fluorescence lifetime microscopy with megapixel resolution for dynamic cellular imaging Paper Number: 79 Speaker: Euan Millar - University of Glasgow 12:00 PM - 12:15 PM Beyond historical speed limitation in time correlated single photon counting without distortion: experimental measurements and future developments Paper Number: 237 Speaker: Giulia Acconcia - Politecnico Di Milano 12:15 PM - 12:30 PM Hyperspectral mid-infrared imaging with undetected photons Paper Number: 268 Speaker: Emma Pearce - Humboldt University of Berlin 12:30 PM - 12:45 PM Determination of scattering coefficients of brain tissues by wide-field time-of-flight measurements with single photon camera. Paper Number: 199 Speaker: André Stefanov - University Of Bern
Embedded Vision I/F WG has released "SLVS-EC IF Standard Version 3.0”. Version 3.0 supports up to 10Gbps/lane, which is 2x faster than Version 2.0, and improved data transmission efficiency.
SLVS-EC v3.0 Rx IP is an interface IP core that runs on Altera® FPGAs. Using this IP, you can quickly and easily implement products that support the latest SLVS-EC standard v3.0. You will also receive an "Evaluation kit" for early adoption.
Altera® FPGAs can receive signals directly from the SLVS-EC Interface.
Compatible with the latest SLVS-EC Specification Version 3.0.
Supports powerful De-Skew function. Enables board design without considering Skew that occurs between lanes.
"Evaluation kit”(see below) is available for speedy evaluation at the actual device level.
About SLVS-EC:
SLVS-EC (Scalable Low Voltage Signaling with Embedded Clock) is an interface standard for high-speed & high-resolution image sensors developed by Sony Semiconductor Solutions Corporation. The SLVS-EC standard is standardized by JIIA (Japan Industrial Imaging Association).
Emberion is introducing an extremely cost-effective SWIR sensor that covers a range from 400 to 2,000 nm and whose manufacturing costs for large quantities are less than €50. The sensors are smaller and lighter, which expands the application possibilities of this technology in a wide range of applications. They combine Emberion's existing patented Quantom Dot technology with the patented wafer-level packaging.
The unique SWIR image sensor’s manufacturing cost is less than 50€ in large volume production.
Espoo, Finland — 1.10.2024 — The current cost level of SWIR imaging technology seriously limits the use of SWIR imaging in a variety of industrial, defense & surveillance, automotive and professional/consumer applications. Emberion Oy, a leading innovator in quantum dot based shortwave infrared sensing technology, is excited to announce its new ultra-low cost SWIR (Short-Wave Infrared) sensor that brings the sensor production cost down to €50 level in large volumes. This revolutionary product is set to deliver high-performance infrared imaging to truly mass-market applications such as automotive and consumer electronics as well as enabling much wider deployment of SWIR imaging in industrial, defence and surveillance applications. The revolutionary sensors are also smaller in size and weight, further extending the possibilities to use this technology in a variety of use cases. Emberion is already shipping extended range high speed SWIR cameras and will bring first ultra-low cost sensor based products to the market in 2025.
Bringing Advanced Imaging to Everyday Devices at a fraction of current cost
The new Emberion sensor family is designed to make advanced shortwave infrared technology accessible to wider markets, including large volume markets such as automotive sensing and consumer electronics. The new ultra-low cost SWIR sensor combines Emberion’s existing patented quantum dot sensor technology with Emberion’s patented wafer-level packaging to drastically reduce the manufacturing costs of packaged sensors. Current InGaAs and quantum dot based image sensors are typically packaged in metal or ceramic casings with a total production cost for packaged imagers in the range of several hundred euros to a few thousand euros depending on sensor technology, imager wavelength range, packaging choices and production volumes. Emberion’s sensors are manufactured and packaged on a full wafer with up to 100 imagers on a single 8” wafer, making the production cost of a single sensor to be a fraction of current alternatives. In addition to low cost, the sensor enables high integration of functionality into the in-house designed read-out IC, reduces size and weight, and provides stability in performance, enabling new functionalities in everyday technology that were once only available in high-end or niche markets.
Examples of applications that require low-cost, compact sensors:
Automotive Industry: Enhanced driver assistance systems (ADAS) with improved visibility in demanding weather conditions for increased safety and performance.
Consumer Electronics: Integrating SWIR sensors into smartphones and wearable devices, allowing for facial recognition in all lighting conditions, gesture control, and material identification.
Augmented and Virtual Reality (AR/VR): Enabling more accurate environmental sensing for immersive, real-world interaction in AR/VR environments.
Drones: Precision vision systems for navigation and object detection in both consumer and defence markets.
Some of the key benefits of the Emberion SWIR sensor include:
Cost Efficiency: Thanks to wafer-level packaging, the production process is streamlined, making this sensor by magnitude more affordable than any existing SWIR solution. Also, the high sensor integration level with image processing embedded into the sensor decreases the need for image post processing significantly and decreases the need for camera components on system level.
Size, weight and power (SWaP) optimization: The miniature and power efficient design is ideal for space-constrained applications like consumer electronics and automotive components. The high sensor integration level is also a significant contributor to the system SWaP optimization.
Stability: The wafer-level packaging improves the sensor stability and protection and makes it suitable for demanding environments like automotive and outdoor applications. It can also be integrated into external packaging if needed, e.g. LCC or metal packaging.
Extended Wavelength Sensitivity: Covering a range from 400 nm to 2000 nm, ideal for detecting objects and scenes extending the spectral range beyond traditional SWIR sensors.
AVC Semiconductor completes a new round of financing of hundreds of millions of yuan to accelerate the localization of high-end CMOS image sensor chips
Recently, CVSENS successfully completed its A round of financing of hundreds of millions of yuan. The financing was led by Hanlian Semiconductor Industry Fund , and co-invested with Zhejiang University Education Foundation and Shanghai Anchuang Chuangxin , which indicates the market's high recognition and confidence in CVSENS.
As a leading CMOS image sensor chip developer in China, Chuangshi Semiconductor focuses on the design and development of high-value-added CMOS image sensor chips, and is committed to providing customers with better quality and more efficient services and products. With more than 15 years of experience in high-end product development, the core team of Chuangshi Semiconductor has broken through the core technology barriers of high-end CIS in various application fields. At present, more than ten CIS chips have been launched, all of which have been successfully taped out at one time, covering multiple application directions such as smart security, low-power IoT, smart cars, and machine vision. Many of the industry's first innovative products have won unanimous praise from clients. In the future, Chuangshi Semiconductor will continue to deepen its image sensor technology, promote industrial upgrading, and lead the new direction of industry development.
Hanlian Semiconductor Industry Fund said: We are optimistic about the huge development space in the field of image sensors and the market opportunities for domestic manufacturers. The Chuangshi Semiconductor team has excellent technical capabilities, business focus and product innovation capabilities, and is a new force in the industry with comprehensive competitiveness. At the same time, working with Chuangshi Semiconductor is an important part of Hanlian Semiconductor Industry Fund's layout in the field of vision. We hope that in the future, Chuangshi Semiconductor will work closely with other projects in our system to jointly develop first-class products and forward-looking innovative technologies in the industry, and provide better product solutions for more application scenarios.
Shanghai Anchuang Chuangxin Enterprise Management Consulting Partnership stated: As a corporate consulting and investment institution focusing on the high-tech field, we are very optimistic about the image sensor chip R&D team of AVC Semiconductor and its outstanding product innovation capabilities. This investment not only provides financial support for AVC Semiconductor, but also uses our ecosystem resources and industry-leading technologies to provide AVC Semiconductor with in-depth industrial links through innovation empowerment, helping to achieve longer-term development goals. We are full of confidence in participating in this investment in AVC Semiconductor, and look forward to helping AVC Semiconductor achieve greater success in technological innovation, market expansion and brand building, and work with AVC Semiconductor to create a new chapter in the image sensor industry.
The founder of AVC Semiconductor said: "I am very honored to receive joint investment from Hanlian Semiconductor Industry Fund, the Education Foundation of my alma mater Zhejiang University, and Shanghai Anchuang Chuangxin Enterprise Management Consulting Partnership. This is not only a recognition of AVC Semiconductor's past achievements, but will also help the company further promote technological innovation, enhance market competitiveness, and inject vitality into the company's long-term development. Since its establishment, AVC Semiconductor has been focusing on the research and development and innovation of CMOS image sensor chips. Its products and services are widely used in many fields such as automotive vision, smart security, low-power IoT, machine vision, and medical vision, constantly promoting technological progress and meeting market demand. We also look forward to working with more partners to jointly promote the innovative development of the image sensor industry."
Transvision Semiconductor will continue to take technological innovation as the core driving force, uphold the core concept of "gratitude, pragmatism and courage to innovate", actively seize market opportunities, continuously expand market share, strengthen industrial chain collaboration, and practice sustainable development, aiming to become a global leading CIS solution provider and provide customers with better quality and more efficient services and products.
The performance of an image sensor relies not only on its design and manufacturing but also on the packaging technology.
CIS packaging is particularly challenging, as any particle in the environment that drops on the sensor surface during the process can cause a significant affect on the final image quality. GalaxyCore’s COM (Chip on Module) packaging technology has revolutionized traditional CSP (Chip Scale Package) and COB (Chip on Board) methods, enhancing the performance, reliability, and applicability of the optical system of camera modules.
Birth of the COM Packaging
Before the advent of COM packaging, CSP and COB were the predominant packaging choices for CIS. CSP places a layer of glass on the sensor to prevent dust. However, the glass also reflects some light, thus degrading image quality. COB requires an exceptionally demanding environment, typically a Class 100 clean room.
Is there an alternative? GalaxyCore’s technical team developed an innovative solution by directly suspending gold wire to serve as pins. In the fantastic microscopic realm, the short gold wire becomes hard and elastic, which can used directly as pins.
At GalaxyCore’s Class 100 clean rooms in the packaging and testing factory in Jiashan City, Zhejiang Province, a fully-automated high-precision equipment bonds the gold wire to the image sensor with exacting accuracy. The sensor is then mounted on a filter base, and the other end of the gold wire is suspended as the pin. The pin is subsequently soldered by the camera module manufacturer to the FPCB. When assembled with a lens and the actuator, a complete camera module can be formed.
We were pleasantly surprised to discover that the performance and reliability of the COM packaging are on par with, or even exceed, those of high-end COB packaging.
Three Advantages for System-level Improvement
1. Enhanced Optical System Performance The COM packaging notably enhances the optical system performance of camera modules. In the COB packaging, the chip is directly mounted on the FPCB. However, the FPCB is prone to deformation during production, which may lead to the tilt of the optical axis and further affect the image quality. In GalaxyCore’s COM packaging, both the chip and lens use the filter base as the benchmark, thus mitigating the optical axis tilt caused by FPCB deformation. This significantly improves the edge resolution of images, especially in large aperture and high-pixel camera modules.
2. Improved Module Reliability and Flexibility In the COM packaging, due to a certain distance between the chip and the FPCB, the camera module is subject to greater back pressure, thus improving the reliability and durability of the module. In the COB packaging, the CIS directly mounted on the FPCB is more sensitive to the back pressure, and the SFR (i.e. image resolution) is more likely to be affected. By contrast, in the COM packaging, the CIS chip is relatively isolated and suspended, making it hard for the back pressure to directly act on the CIS chip. As such, a better image resolution can be achieved. Different from the COB packaging, the COM packaging connects the chip pins and pads through soldering. This solution reduces the material requirements for the FPCB and further enhances its adaptability and flexibility.
3. Minimized Module In the COM packaging, FPCB can be hollowed out to allow the chip to sink into it. Compared to the COB packaging with direct mounting of chip on the FPCB or reinforcement of steel sheets, the COM solution can control the back pressure more effectively and reduce the requirements for steel sheet thickness. This enhances the height advantage of the overall packaging module, to meet cell phones’ stringent requirements for space. This advantage is more notable in devices seeking thin and light designs.
GalaxyCore’s COM packaging ensures both high performance and reliability for the optical system while simplifying the subsequent production processes for module manufacturers. This method reduces the dependence on dust-free environments and enhances quality, yield, and efficiency. With the mass production of COM chips and further application of this technology, it will deliver improved imaging performance across a broader range of end products.
Electronic Imaging 2025 is accepting submissions --- late submission deadline is tomorrow (Oct 15, 2024). The Electronic Imaging Symposium comprises 17 technical conferences to be held in person at the Hyatt Regency San Francisco Airport in Burlingame, California.
Acquisition of Paris-based SWIR imaging provider expands Lynred’s product portfolio to include coveted large format shortwave sensors with small pixel pitch
Grenoble, France, October 7, 2024 – Lynred, a leading global provider of high-quality infrared sensors for the aerospace, defense and commercial markets, today announces its acquisition of New Imaging Technologies, a Paris-based shortwave infrared (SWIR) imaging modules and sensors provider. In a strategic move to consolidate its leadership in infrared sensors, Lynred’s product portfolio will expand to include high-definition large array SWIR sensors in small pixel pitch, bolstering its product offering across all wavelength bands (short to very longwave). The transaction is expected to close in Q4, 2024 and is subject to customary conditions.
The deal includes New Imaging Technologies’ large and innovative portfolio of SWIR products (imaging sensors and modules) and a portfolio of wide dynamic range patents. This enables Lynred to offer global customers large format SWIR sensors with advanced capabilities for applications in markets where AI, deep learning and multispectral imaging are driving growth. New Imaging Technologies (NIT) is the only European firm to manufacture and market a SWIR HD1080p array and associated module at a pixel size of 8µm, a key asset for several applications that Lynred will now leverage.
“Lynred’s acquisition of NIT is a growth accelerator. We will shorten time to market and leverage synergies in offering state-of-the-art SWIR products. The global market for SWIR infrared imaging for machine vision is growing fast, as well as for defense applications, such as laser detection and in new space,” said Hervé Bouaziz, executive president at Lynred. “NIT brings to Lynred the agility of a small, innovative organization, with an extensive product offering able to cater to our large customer base. As we share complementary industrial supply chains and technical skills, we can deliver highly competitive SWIR imaging sensors and modules to customers.”
This strategic acquisition is yet another significant investment Lynred is making in order to strengthen its leadership in infrared, a critical technology for a growing range of commercial applications and sovereign activities. In parallel, Lynred is investing significantly in its ongoing Campus project. Campus includes the construction of state-of-the-art clean rooms that will double Lynred’s current capacity.
Lynred and NIT will attend Vision Stuttgart in Germany (October 8-10), booth #8C46, and AUSA (October 14-16), in Washington DC, booth #8015, showcasing products based on the companies’ latest technological achievements. These two important trade shows will give them the opportunity to share further information and answer any questions about the acquisition.
Neil Na et al from Artilux and UMass Boston have published a paper titled "Room-temperature photonic quantum computing in integrated silicon photonics with germanium–silicon single-photon avalanche diodes" in APL Quantum.
Abstract: Most, if not all, photonic quantum computing (PQC) relies upon superconducting nanowire single-photon detectors (SNSPDs) typically based on niobium nitride (NbN) operated at a temperature <4 K. This paper proposes and analyzes 300 K waveguide-integrated germanium–silicon (GeSi) single-photon avalanche diodes (SPADs) based on the recently demonstrated normal-incidence GeSi SPADs operated at room temperature, and shows that their performance is competitive against that of NbN SNSPDs in a series of metrics for PQC with a reasonable time-gating window. These GeSi SPADs become photon-number-resolving avalanche diodes (PNRADs) by deploying a spatially-multiplexed M-fold-waveguide array of M GeSi SPADs. Using on-chip waveguided spontaneous four-wave mixing sources and waveguided field-programmable interferometer mesh circuits, together with the high-metric SPADs and PNRADs, high-performance quantum computing at room temperature is predicted for this PQC architecture.
Schematic plot of the proposed room-temperature PQC paradigm with integrated SiPh using the path degree of freedom of single photons: single photons are generated through SFWM (green pulses converted to blue and red pulses) in SOI rings (orange circles), followed by active temporal multiplexers (orange boxes that block the blue pulses), and active spatial multiplexers (orange boxes that convert serial pulses to parallel pulses) (quantum sources), manipulated by a FPIM using cascaded MZIs (quantum circuits), and measured by the proposed waveguide GeSi SPADs as SPDs and/or NPDs (quantum detectors). An application-specific integrated circuit (ASIC) layer is assumed to be flipped and bonded on the PIC layer with copper (Cu)–Cu pillars (yellow lines) connected wafer-level hybrid bond, or with metal bumps (yellow lines) connected chip-on-wafer-on-substrate (CoWoS) packaging. The off-chip fiber couplings are either for the pump lasers or the optical delay lines.
(a) Top view of the proposed waveguide GeSi SPAD, in which the materials assumed are listed. (b) Cross-sectional view of the proposed waveguide GeSi SPAD, in which the variables for optimizing QE are illustrated.
(a) QE of the proposed waveguide GeSi SPAD without the Al back mirror, simulated at 1550 nm as a function of coupler length and Ge length. (b) QE of the proposed waveguide GeSi SPAD with the Al back mirror, simulated at 1550 nm as a function of gap length and Ge length. (c) QE of the proposed waveguide GeSi SPAD with the Al back mirror, simulated as a function of wavelength centered at 1550 ± 50 nm (around the C band) and 1310 ± 50 nm (around the O band), given the optimal conditions, that is, coupler length equal to 1.4 μm, gap length equal to 0.36 μm, and Ge length equal to 14.2 μm. While the above data are obtained by 2D FDTD simulations, we also verify that for Ge width >1 μm and mesa design rule <200 nm, there is little difference between the data obtained by 2D and 3D FDTD simulations.
Dark current of GeSi PD at −1 V reverse bias, normalized by its active region circumference, plotted as a function of active region diameter. The experimental data (blue dots) consist of the average dark current between two device repeats (the ratio of the standard deviation to the average is <2%) for five different active region diameters. The linear fitting (red line) shows the bulk dark current density and the surface dark current density with its slope and intercept, respectively.
For the scheme of photon-based PQC: (a) The probability of successfully detecting N photon state and (b) the fidelity of detecting N photon state, using M spatially-multiplexed waveguide GeSi SPADs at 300 K as an NPD. (c) The difference in the probabilities of successfully detecting N photon state, and (b) the difference in the fidelities of detecting N photon state, using M spatially-multiplied waveguide GeSi SPADs at 300 K and NbN SNSPDs at 4 K as NPDs. Note that no approximation is used in the formula for plotting these figures.
For the scheme of qubit-based PQC: (a) The probability of successfully detecting N qubit state, and the fidelity of detecting N qubit state, using single waveguide GeSi SPADs at 300 K as SPDs. (b) The difference in the probabilities of successfully detecting N qubit state, and the difference in the fidelities of detecting N qubit state, using single waveguide GeSi SPADs at 300 K and NbN SNSPDs at 4 K as SPDs. Note that no approximation is used in the formula for plotting these figures.
Eric Fossum, Nobukazu Teranishi, and Albert Theuwissen have published a review paper titled "Digital Image Sensor Evolution and New Frontiers" in the Annual Review of Vision Science.
This article reviews nearly 60 years of solid-state image sensor evolution and identifies potential new frontiers in the field. From early work in the 1960s, through the development of charge-coupled device image sensors, to the complementary metal oxide semiconductor image sensors now ubiquitous in our lives, we discuss highlights in the evolutionary chain. New frontiers, such as 3D stacked technology, photon-counting technology, and others, are briefly discussed.
Figure 1 Illustration of a four-phase charge-coupled device diagram, a potential well diagram, and clock charts. As four clocks switch sequentially, the potential wells move rightward together with the charge packets.
Figure 2 Illustration of a (three-phase) interline-transfer (ILT) charge-coupled device (CCD) showing (left) a unit cell with a photodiode (PD) and vertical CCD and (right) the entire ILT CCD image sensor. The photosignal moves from the PD into the vertical CCD, and then into the horizontal CCD to the sense node and output amplifier.
Figure 3 A pinned PD in an interline-transfer CCD with one phase of the CCD shift register (VCCD) shown. (a) A physical cross-section and (b) a potential diagram showing the electrons transferring from the PD to the VCCD. Abbreviations: CCD, charge-coupled device; CS, channel stop; PD, photodiode; TG, transfer gate; VCCD, vertical CCD.
Figure 4 Microlenses to concentrate light on the photoactive area of a pixel. (a) Top view. (b) Cross-sections for different thermal-flow times. Images courtesy of NEC Corp.
Figure 5 A 16-Mpixel stitched complementary metal oxide semiconductor image sensor on a 6-inch-diameter wafer. Figure reproduced from Ay & Fossum (2006).
Figure 6 (a) Complementary metal oxide semiconductor (CMOS) image sensor block diagram. (b) Photograph of early Photobit CMOS image sensor chip for webcams. (Left) Digital logic for control and input-output (I/O) functions. (Top right) The pixel array. (Bottom right) The column-parallel analog signal processing and analog-to-digital converter (ADC) circuits. Photo courtesy of E.R.F.
Figure 7 An illustrative PPD 4-T active pixel with intrapixel charge transfer. (a) A circuit schematic (Fossum & Hondongwa 2014). (b) A band diagram looking vertically through the PPD showing the photon, electron–hole pair, and SW. (c) A physical cross-section showing doping levels (Fossum 2023). Abbreviations: COL BUS, column bus line; FD, floating diffusion; PPD, pinned photodiode; RST, reset gate; SEL, select gate; SF, source-follower; SW, storage well; TG, transfer gate.
Figure 8 Illustrative example of (a) a frontside-illuminated pixel and (b) a backside-illuminated (BSI) pixel showing the better light gathering capability of the BSI pixel.
Figure 9 Illustrative cross-sectional comparison of (a) a backside-illuminated device and (b) 3D stacked image sensors where the lower layer is used for additional circuitry.
Figure 10 Quanta image sensor concept showing the spatial distribution of jot outputs (left), an expanded view of jot output bit planes at different time slices (center), and gray-scale image pixels formed from spatiotemporal neighborhoods of jots (right). Figure adapted from Ma et al. (2022a).
Acquisition completion of NKT Photonics. Accelerating growth in the semiconductor, quantum, and medical fields through laser business enhancement.
Hamamatsu Photonics K.K. (hereinafter referred to as “Hamamatsu Photonics”) is pleased to announce the completion of the previously published acquisition of NKT Photonics A/S (hereinafter referred to as “NKT Photonics”).
NKT Photonics is the leading supplier of high-performance fiber lasers and photonic crystal fibers. Based on their unique fiber technology, the laser products fall within three major product lines:
Supercontinuum White Light Lasers (SuperK): The SuperK lasers deliver high brightness in a broad spectral range (400 nm-2500 nm), and are used within bio-imaging, semiconductor metrology, and device-characterization.
Single-Frequency DFB Fiber Lasers (Koheras): The Koheras lasers have extremely high wavelength stability and low noise, and are ideal for fiber sensing, quantum computing, and quantum sensing.
Ultra-short pulse Lasers (aeroPULSE and Origami): This range of lasers consists of picosecond and femtosecond pulsed lasers with excellent beam quality and stability. The lasers are mainly used within ophthalmic surgery, bio-imaging, and optical processing applications.
The acquisition enables us to combine Hamamatsu Photonics’ detectors and cameras with NKT Photonics' lasers and fibers, thereby offering unique system solutions to the customers.
One special market of interest is the rapidly growing quantum computing area. Here NKT Photonics’ Koheras lasers serve customers with trapped ions systems requiring high power narrow linewidth lasers with extremely high wavelength stability and low noise. The same customers use Hamamatsu Photonics’ high-sensitivity cameras and sensors to detect the quantum state of the qubits. Together, we will be able to provide comprehensive solutions including lasers, detectors, and optical devices for the quantum-technology market.
Another important area of collaboration is the semiconductor market. With the trend toward more complex three-dimensional semiconductor devices, there is an increasing demand for high precision measurement equipment covering a wide range of wavelengths. By combining NKT Photonics' broadband SuperK lasers with Hamamatsu Photonics’ optical sensors and measuring devices, we can supply expanded solutions for semiconductor customers needing broader wavelength coverage, multiple measurement channels, and higher sensitivity.
Finally, in the hyperspectral imaging market, high-brightness light sources with a broad spectral range from visible to near-infrared (400 nm-2500 nm) are essential. Additionally, unlike halogen lamps, since no heat generation occur, the demand for NKT Photonics' SuperK is increasing. We can provide optimal solutions by integrating it with Hamamatsu Photonics’s image sensors and cameras, leveraging the unique compound semiconductor technologies.
With this acquisition, Hamamatsu Photonics Group now possesses a very broad range of technologies within light sources, lasers, and detectors. The combination of NKT Photonics and Hamamatsu Photonics will help us to drive our technology to the next level. NKT Photonics will continue their operating structure and focus on providing superior products and solutions to their customers.
SeeDevice Inc. Files Complaint In U.S. District Court Against Korean Broadcasting System
ORANGE, California, Sept. 13, 2024 (GLOBE NEWSWIRE) -- SeeDevice Inc. (“SeeDevice”), together with its CEO and founder Dr. Hoon Kim, has filed a Complaint in the U.S. District Court for the Central District of California against Korean Broadcasting System (KBS), and its U.S. subsidiary KBS America, Inc. (collectively, “KBS”) for trade libel and defamation. The claims are based on an August 25, 2024, broadcast KBS is alleged to have published on its YouTube channel and KBS-america.com (“The KBS Broadcast”).
The complaint asserts that KBS Broadcast published false and misleading statements regarding the viability and legitimacy of SeeDevice and Dr. Kim’s QMOS™ (quantum effect CMOS) SWIR image sensor, as a result of having omitted the fact that in 2009, and again in 2012, the Seoul High Court and Seoul Administrative Court found Dr. Kim’s sensor to be legitimate.
Dr. Kim’s QMOS™ sensor has garnered industry praise and recognition and is the subject of numerous third-party awards. In the past year alone, SeeDevice has been recognized with four awards for outstanding leadership and innovative technology: "20 Most Innovative Business Leaders to Watch 2023" by Global Business Leaders, "Top 10 Admired Leaders 2023" by Industry Era, "Most Innovative Image Technology Company 2023" by Corporate Vision, and “Company of the Year” of the Top 10 Semiconductor Tech Startups 2023 by Semiconductor Review.
In their lawsuit, SeeDevice and Dr. Kim seek retraction of KBS’s defamatory broadcast, and a correction of the record, in addition to significant monetary damages and injunctive relief preventing further misconduct by KBS.
Dissertation defense by B. McReynolds on his thesis titled "Benchmarking and Pushing the Boundaries of Event Camera Performance for Space and Sky Observations," PhD, ETH Zurich, 2024
