tag:blogger.com,1999:blog-19092890.post3152696007850819496..comments2024-03-28T17:41:43.970+02:00Comments on Image Sensors World: Draper Si-Ge-based Single-Photon Detector Gets AwardVladimir Koifmanhttp://www.blogger.com/profile/01800020176563544699noreply@blogger.comBlogger1125tag:blogger.com,1999:blog-19092890.post-45164826261170878582020-11-25T18:38:39.185+02:002020-11-25T18:38:39.185+02:00Very short patent with no evidence of reduction to...Very short patent with no evidence of reduction to practice. Electrons collected by the photodiode create a miniscule current that increases the voltage bias of the EB junction. This increase in voltage bias causes a concomitant increase in the forward bias current of the transistor, potentially triggering avalanche. Unless this is a deep nanoscale version of the transistor, the injected electron is lost in the sea of majority electrons in the emitter, and does not itself wander to the EB junction to be collected. Furthermore, there are significant time delays, including the dime delay for photon collection in the zero biased diode and charging time of the EB junction. I see no evidence that this could achieve timing performance "better than one nanosecond". Eric Harmonhttps://www.blogger.com/profile/03122052565163577163noreply@blogger.com