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Thursday, November 18, 2010

Silicon Photodiode QE Extended to 80% due to Surface Plasmon Resonance

OptoIQ: In a paper to be presented on the upcoming IEDM a team led by the National Nano Device Laboratories (Hsinchu, Taiwan) will report an external QE of >80% for photodiodes in the visible range. The QE extension was achieved by harnessing a local surface plasmon resonance (LSPR) effect "due to self-accumulated local electric field in these corners" of a metal pattern on top of the photodiode. Each pattern has a period of 2.4µm and unit area of 1.44µm2.

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3 comments:

  1. AnonymousNovember 18, 2010 at 8:39 PM

    great invention!

    ReplyDelete
  2. AnonymousNovember 18, 2010 at 8:40 PM

    the director of this lab is Dr. SM. Sze.

    ReplyDelete
  3. Dave GilblomNovember 19, 2010 at 5:00 AM

    It looks like part of each pixel is covered with metal to get this effect to work. Is the QE net for the whole pixel area or just for the exposed silicon?

    ReplyDelete

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