Image Sensors at Electronic Imaging 2012

As AT mentioned in the other post comments, the program of Electronic Imaging 2012 conference has already been published. As always, there is a lot of image sensor stuff there, too much to publish it in full.

Some interesting tidbits from the papers:

• CMOSIS presents VGA 600fps sensor with global shutter (8298-1)
• Anafocus presents 5.2MP 250fps with HDR and "embedded intelligence" (Paper 8298-2)
• NHK, Japan Broadcasting Corp. and Kinki Univ. present 300K-pixel 2Mfps camera. (Paper 8298-22)
• MIT and Simon Fraser Univ. experimental measurements of various CCDs and CMOS sensors defect density revealed that at 7um pixels the CCD defect rate is ~2.5 greater than for CMOS, but for 2um pixels the rates are equal. (Paper 8298-12)
• Portland State Univ. explained why some CCD's dark current behave nonlinearly with respect to exposure time and additionally the dark current is affected by the presence of illumination [ISW - some CMOS sensors have similar dark current behavior for similar reasons]. (Paper 8298-13)
• Tohoku Univ. presents how to use atomically flat Si surface to create PD with nearly 100% internal QE in UV light. (Paper 8298-18)
• Fraunhofer Institute and Ulm Univ. present multi-aperture camera approach allowing digital focusing and refocusing from 4mm to infinity after the image was taken. (Paper 8299-6)