Lists

▼

Monday, September 03, 2012

Toshiba Publishes 1.12um BSI Pixel Claims

Toshiba Review published Science and Technology Highlights 2012 with few words about the status of its 1.12um BSI pixel development. Thoshiba claims to be the first company in the world that mass produces 1.12um pixel sensors, as of Dec. 2011.

The new 8MP image sensor is said to achieve 125% higher sensitivity per unit area as compared with 1.4um FSI pixel sensor [probably meant to be 25% improvement, rather than 125%]. The "partially introduced" 40nm process helps to increase the PD area and achive 118% saturation charge per unit area. The sensor also features "optimization of the transistor sharing method and photodiode isolating structure" to increase speed and reduce crosstalk and noise.

The 8MP sensor has a speed of 30fps at full resolution or 60fps in 1080p video mode. It also includes HDR function. This description appears to be close to the previously announced T4K05 spec.

at

6 comments:

  1. AnonymousSeptember 4, 2012 at 1:47 AM

    40nm seems expensive, is it better than OMNI and SONY BSI based on design rules.

    ReplyDelete
  2. AnonymousSeptember 4, 2012 at 5:19 AM

    OVT uses 65nm, and Sony uses 90nm.

    ReplyDelete
  3. AnonymousSeptember 4, 2012 at 4:07 PM

    "Partially introduced" suggests taking the front-end process from an existing line, e.g. for memory, but still running lower cost process technology on the back-end-of-line.

    ReplyDelete
  4. AnonymousSeptember 4, 2012 at 4:21 PM

    Interesting as for it would have been the other way around : low cost front end, newer back end. Narrow metals are important for FSI active area.

    ReplyDelete
  5. Albert TheuwissenSeptember 4, 2012 at 5:27 PM

    You are right, but this is BSI !

    ReplyDelete
  6. AnonymousSeptember 4, 2012 at 9:24 PM

    Good front end photolith is critical to achieve small pitch.

    ReplyDelete

All comments are moderated to avoid spam and personal attacks.