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The deep Pwell is under STI which is amorphous material. In this case, all the channel effect should be suppressed. Is the deep Pwell implanted before STI fill ? In this case, how to fill STI in low temperature ? -yang ni
I think he means channeling effect outwards into the photodiode region which will give variation in the full-well capacity/responsivity
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The deep Pwell is under STI which is amorphous material. In this case, all the channel effect should be suppressed. Is the deep Pwell implanted before STI fill ? In this case, how to fill STI in low temperature ?
ReplyDelete-yang ni
I think he means channeling effect outwards into the photodiode region which will give variation in the full-well capacity/responsivity
ReplyDelete