"Electron Multiplying Device Made on a 180 nm Standard CMOS Imaging Technology" by Pierre Fereyre, Frédéric Mayer, Mathieu Fournier, Clément Buton, Timothée Brugière, and Rémi Barbier presents electron multiplying CMOS pixel:
e2v also publishes another IISW paper: "CMOS Charge Transfer TDI with Front Side Enhanced Quantum Efficiency" by F. Mayer, S. Pesenti, F. Barbier, H. Bugnet, J. Endicott, F. Devriere, T. Ligozat
Very interesting researches !
ReplyDeleteI'm looking forward to an industrial EMCMOS that could be used for
astronomy imaging.
EMCCD have a lot of drawbacks :
- only small sensors are available for industrial application,
- cost an arm or more !
- very slow fps compared to recent CMOS,
Do you think that this new technology will overpass all these
drawbacks ?
Thanks.