"Conventional approaches to NIR rely solely on thick silicon to improve NIR image-sensor sensitivity. However, this results in crosstalk and reduces the modulation transfer function (MTF). Attempts to overcome this by introducing deep trench isolation (DTI) often lead to defects that corrupt the dark area of the image," explained Lindsay Grant, VP of process engineering at OmniVision. "We have worked to overcome these challenges in an exclusive engagement with our foundry partner, leveraging technologies in its 300mm wafer fab. Initial results are very promising, and have generated a great deal of interest with our OEM customers."
OmniVision's approach to NIR imaging combines thick-silicon pixel architectures with careful management of wafer surface texture to improve QE, and extended DTI to help retain MTF without affecting the sensor's dark current.
The company video demos Nyxel NIR advantages:
hmmm SioNYX v. NYXel Weren't we just discussing SiOnyx performance recently?
ReplyDeleteSionyx or Sony pyramids?
Deletehttps://image-sensors-world.blogspot.com/2017/06/sony-enhances-ir-sensitivity-by-80-with.html
US2015340391 ?
ReplyDeleteit doesn't disclose much about the specific scattering structure.
Interesting. Thanks for the link. This scattering pattern in this application is placed on the front side, while the light comes from the backside. The unabsorbed part of light that passes through the thin sensing layer is reflected back by this scattering structure.
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