SF Current and RTN

Japanese Journal of Applied Physics publishes Tohoku University paper "Effect of drain current on appearance probability and amplitude of random telegraph noise in low-noise CMOS image sensors" by Shinya Ichino, Takezo Mawaki, Akinobu Teramoto, Rihito Kuroda, Hyeonwoo Park, Shunichi Wakashima, Tetsuya Goto, Tomoyuki Suwa, and Shigetoshi Sugawa. It turns out that lower SF current can reduce RTN, at least for 0.18um process used in the test chip: