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Sunday, June 23, 2019

XFAB Releases SPAD and APD Module in its 180nm Process

X-FAB Silicon Foundries announces the availability of APD and SPAD devices for implementation in the company’s 180nm high-voltage XH018 process. The APD has a high linear gain, and is fully scalable - going from just ten to several hundred micrometer dimensions. The proprietary X-FAB quenching circuit used in the SPAD results in a dead time of less than 15ns. In addition, its low dark count rate (less than 100 counts/s/µm²) means that it is less susceptible to thermal noise. The PDP of the SPAD is maintained across a wide range of wavelengths (e.g. 40% at 400nm). Furthermore, the low breakdown voltage (less than 20V) that has been achieved.

The X-FAB APD and SPAD can be utilized in a broad spectrum of different applications - including proximity sensing, LiDAR, time of flight (ToF), medical imaging (CT and PET) and scientific research. Being AEC-Q100 compliant, they are suitable for deployment within automotive systems.

5 comments:

  1. Which pixel size?

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    Replies
    1. pitch is 23.19 µm, optical active is 10 µm

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    2. Sorry, wrong number. The correct pitch is 21.28 µm and the fill factor 18.1%.

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  2. What is the PDP for NIR? For example at 940nm

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  3. What is the required dead time of the quenching for a PDP of 1% at typical daylight (0.1 W/cm²) for such a 10 µm diameter SPAD, to not run in saturation (max count rate)?
    Once you can answer this, you might loose the interrest in high PDP for applications with "uncontrolled" light conditions. With a filter you can gain about two orders of magnitude (reduce 0.1 W/cm² to 0.001 W/cm², as you still need a gap to let your 940 nm light through) in ambient suppression. Still a PDP of 1% gives you a lot counts and your system is likely far from linear for this operating condition. A low PDP can even help you in such cases.

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