In a recent preprint (https://arxiv.org/ftp/arxiv/papers/2209/2209.14242.pdf) Ponizovskaya-Devine et al. describe a new Ge-on-Si image sensor with enhanced sensitivity up to 1.7um for NIR applications.
Abstract
We present a Germanium “Ge-on-Si” CMOS image sensor with backside illumination for the near-infrared (NIR) electromagnetic waves (wavelength range 300–1700 nm) detection essential for optical sensor technology. The micro-holes help to enhance the optical efficiency and extend the range to the 1.7 µm wavelength. We demonstrate an optimization for the width and depth of the nano-holes for maximal absorption in the near infrared. We show a reduction in the cross-talk by employing thin SiO2 deep trench isolation in between the pixels. Finally, we show a 26–50% reduction in the device capacitance with the introduction of a hole. Such CMOS-compatible Ge-onSi sensors will enable high-density, ultra-fast and efficient NIR imaging.
Interesting device simulation results. These things always look great on paper until you try to make a practical device. But, maybe this one will work..
ReplyDeletethanks for sharing. And thanks to mr Fossum, his invention literally changed my life. I joined Micron in 2004 on DRAM, then switched on image sensor in 2005, first smartphones, then automotive (with a stint in DSLR); so much learning and fun through all the challenges. Thanks to mr Fossum.
ReplyDeletewhat i ask myself on and on... for what will all this emerging ir imagers be used? it seems that some of the current iphone 14 models have a "ir through display" application as some kind of first mass product in 'non SI based IR imaging', right? but this seems to be more like a proximity sensor than a camera if I understand it correctly. Looking forward to learn about new mass applications for ir cameras (same applies for the event sensors, also there I'm looking forward to learn for what this devices will actually get used in a mass product environment...
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