- Methods to extend the dynamic range of snapshot active pixel sensors, A. Darmont, Melexis Tessenderlo N.V. (Belgium)
- A low-noise wide dynamic range CMOS image sensor with low and high temperatures resistance, K. Mizobuchi, S. Adachi, J. Tejada, Texas Instruments Japan Ltd. (Japan); N. Akahane, S. Sugawa, Tohoku Univ. (Japan)
- A linear response 200-dB dynamic range CMOS image sensor with multiple voltage and current readout operations, N. Ide, N. Akahane, S. Sugawa, Tohoku Univ. (Japan)
- FDTD-based optical simulations methodology for CMOS image sensors pixels architecture and process optimization, F. Hirigoyen, A. Crocherie, J. M. Vaillant, Y. Cazaux, STMicroelectronics (France)
- Characterization of pixel defect development during digital imager lifetime, J. Leung, G. H. Chapman, J. Dudas, Simon Fraser Univ. (Canada); I. Koren, Z. Koren, Univ. of Massachusetts/Amherst
- Measurements of dark current in a CCD imager during light exposures, R. Widenhorn, I. Hartwig, E. Bodegom, Portland State Univ.
- Dark current measurements in a CMOS imager, E. Bodegom, B. Kopp, W. Porter, R. Widenhorn, Portland State Univ.
- Noise calculation model and analysis of high-gain readout circuits for CMOS image sensors, S. Kawahito, S. Itoh, Shizuoka Univ. (Japan)
- A new current mirroring integration based readout circuit design for infrared imaging sensors of MCT, G. Akbari Zadeh, Sr., M. Afshin, G. Rezai Rad, Iran Univ. of Science and Technology (Iran)
- Mitigating polarization effects in on-die diffractive optics for a CMOS image sensor, C. J. Thomas, R. I. Hornsey, York Univ. (Canada)
- A 800(H) x 600(V) high-sensitivity and high-full well capacity CMOS image sensor with active pixel readout feedback operation, W. Lee, N. Akahane, Tohoku Univ. (Japan); S. Adachi, K. Mizobuchi, Texas Instruments Japan Ltd. (Japan); S. Sugawa, Tohoku Univ. (Japan)
- An optimum design of the LOFIC CMOS image sensor for high sensitivity, low noise, and high full well capacity, N. Akahane, W. Lee, S. Sugawa, Tohoku Univ. (Japan)
- Electrical characterization of CMOS 1T charge-modulation pixel in two design configurations, A. Tournier, STMicroelectronics (France) and Univ. Claude Bernard Lyon 1 (France); F. Roy, STMicroelectronics (France); G. Lu, Univ. Claude Bernard Lyon 1 (France); B. Deschamps, STMicroelectronics (France)
- Classification of metallic impurities effect on CMOS image sensor, H. Bourdon, STMicroelectronics (France) and InESS (France); M. Zuvic, STMicroelectronics (France); A. Mesli, InESS (France); D. Dutartre, STMicroelectronics (France)
- CMOS image sensor with overlaid organic photoelectric conversion layers: development of layers with desirable spectral sensitivities, M. Ihama, T. Mitsui, M. Hayashi, Y. Maehara, S. Takada, Fuji Photo Film Co., Ltd. (Japan)
- Mitigation of pixel scaling effects in CMOS image sensors, C. C. Fesenmaier, P. B. Catrysse, Stanford Univ.
- A versatile method for optical performances characterization of off-axis CMOS pixels with microlens radial shift, J. M. Vaillant, D. Herault, E. Huss, T. Decroux, Y. Cazaux, F. Hirigoyen, N. Virollet, C. Augier, L. Dematteis, STMicroelectronics (France)
- Novel method of Euclidean distance calculation for bilateral filtering based on CMOS sensor noise profiles, M. Smirnov, R. Gheorghe, M. Aleksic, Advanced Micro Devices, Inc. (Canada)
- Noise reduction versus spatial resolution, U. Artmann, D. Wueller, Image Engineering (Germany)
- Profile-based fast noise estimation and high ISO noise reduction for digital cameras, Y. Yoo, H. Wey, S. Lee, C. Kim, SAMSUNG Advanced Institute of Technology (South Korea)
- Fast and accurate auto-focusing algorithm based on two defocused images using discrete cosine transform, B. Park, S. Kim, B. Kang, S. Lee, C. Kim, SAMSUNG Advanced Institute of Technology (South Korea)
- An approach to improve cell-phone cameras dynamic range using a nonlinear lens correction, S. R. Goma, M. Aleksic, Advanced Micro Devices, Inc. (Canada)
- Characterization, measurement, and correction of color fringing, F. Cao, F. Guichard, H. Hornung, DxO Labs. (France)
- Mobile camera motion blur: not just a drunkard’s walk, T. J. Cooper, P. M. Hubel, Foveon, Inc.
- Spectral sensitivity optimization of color image sensor considering photon shot noise, H. Kuniba, Nikon Corp. (Japan)
- Does resolution really increase image quality?, F. Cao, F. Guichard, H. Hornung, DxO Labs. (France)
- Exposure preference for digital still imaging: a psychophysical study, J. Li, H. Hwang, R. Velarde, K. Atanassov, X. Jiang, R. Hsiu, Qualcomm, Inc.
Sunday, January 13, 2008
Electronic Imaging Conference is to be held on January 28-31, 2008. Traditionally it has quite large content on image sensors and around. Below are some of the interesting titles:
Posted by Vladimir Koifman at 18:50