Paper on FSI vs BSI for SPADs

In a paper titled "" Eom et al. from Yonsei University, EPFL, Sungkyunkwan University and TruPixel, Inc. write:

This paper presents a process-controlled study of illumination engineering in single-photon avalanche diodes (SPADs) fabricated in a 110 nm standard CMOS image sensor (CIS) technology. Front-illuminated (FI) and back-illuminated (BI) SPADs were implemented with identical front-end-of-line (FEOL) structures, including the junction and guard-ring configurations, enabling the isolation of the effects of illumination direction and back-end-of-line (BEOL) configuration without modifying the junction structure. Through TCAD simulations and comprehensive experimental characterizations, including current–voltage, light-emission, dark count rate (DCR), photon detection probability (PDP), and timing-jitter measurements, we systematically analyze the performance trade-offs introduced by the BI configuration. The BI SPAD exhibits enhanced near-infrared PDP and a broader spectral response due to its deeper absorption region and the incorporation of a metal reflector, while maintaining identical avalanche characteristics, as evidenced by an unchanged 72 ps full-width-at-half-maximum (FWHM) timing jitter. However, the backside illumination increases the diffusion tail, indicating a trade-off between near-infrared sensitivity and diffusion-related timing performance. These results provide design guidelines for optimizing SPAD performance through illumination-direction and BEOL engineering while preserving the FEOL design and demonstrate a useful approach for SPAD integration in standard CMOS technology. 

Link: https://www.mdpi.com/1424-8220/26/5/1664

Figure 1. Cross-sections of the SPADs with different illumination configurations: (a) FI SPAD; (b) BI SPAD.

 Figure 5. LET results of the SPADs at Vex = 3 V, visualizing avalanche emission across the active area: (a) FI SPAD; (b) BI SPAD.

 

Figure 9. PDP spectra of the FI and BI SPADs at Vex = 3 V, together with the optical penetration depths of different wavelengths in silicon: (a) PDP spectra from 400 to 950 nm. (b) Optical penetration depths in silicon.
 

Figure 10. Wavelength-dependent PDP enhancement of the BI SPAD over the FI SPAD.

 

Teledyne e2v announces camera with angle-sensitive pixels

From globalnewswire: https://www.globenewswire.com/news-release/2026/03/05/3249875/0/en/Teledyne-e2v-Introduces-Perciva-5D-Camera-Occlusion-free-3D-Vision-for-Industrial-Retail-and-Robotic-Imaging.html

Teledyne e2v Introduces Perciva™ 5D Camera: Occlusion-free 3D Vision for Industrial, Retail, and Robotic Imaging

GRENOBLE, France, March 05, 2026 (GLOBE NEWSWIRE) -- Teledyne e2v, a Teledyne Technologies [NYSE: TDY] company and global innovator of imaging solutions, announces the launch of the Perciva™ 5D camera, a breakthrough imaging innovation designed to make high-quality short-range 3D vision cost-effective, reliable, and easy to integrate.

Most industrial cameras only capture 2D images, yet many applications increasingly require depth perception at close and very-close distances. Perciva 5D delivers this capability through a unique Angular Sensitive Pixel technology and advanced on-board processing, enabling real-time 2D and 3D image fusion at the calibrated working distance range. Perciva 5D also features a powerful Neural Processing Unit (NPU), enabling Artificial Intelligence models to run on-device and be customized to each customer’s specific requirements.

Perciva 5D generates 2D and 3D data from a single CMOS sensor, free from optical occlusion, producing time-aligned 2D frames alongside pixel-aligned 3D depth maps. With comprehensive 3D processing built directly into the camera, users benefit from immediate depth maps or point-cloud outputs. Perciva 5D operates using ambient light, indoors or outdoors, eliminating the need for an external NIR source while maintaining reliable performance and minimizing overall system costs. Designed for challenging environments, it offers plug-and-play integration through its GenICam-compliant, GigE Vision interface and robust IP6x-rated housing with industrial M12 connectors.

Factory calibrated and weighing just 230 grams, Perciva 5D operates at less than 5 W, and is ideal for robotics (arms, cobots and humanoids), retail self-checkout solutions, and 3D industrial process monitoring. It supports user-adjustable frame rates or triggered acquisition and multiple power options. Using GenDC / GenTL the camera integrates seamlessly with Teledyne’s Spinnaker® 4 API and SpinView® for 2D / 3D visualisation, as well as leading machine-vision software platforms.
Perciva 5D will be showcased during Embedded World, Nuremberg, Germany, from 10-12 March 2026. Visit Teledyne at stand 2-541 in Hall 2 or contact us online for more information.

Documentation, samples, and software for evaluation or development are available upon request. 

New Leadership at Bharat Semi

Dr Boyd Fowler has joined as the Chief Technology Officer at Bharat Semi, an Indian sensor/semiconductor startup.

Here's some text from their recent post:

One of the world's foremost leaders in sensors, Boyd brings deep expertise in CMOS and infrared image sensors, semiconductor architecture, and large-scale engineering strategy. He played a foundational role in developing the technology that enabled commercial image sensors. Additionally, he helped develop the first pinned photodiodes at the world's largest fab.  Before joining Bharat Semi, Boyd served as CTO at OMNIVISION Technologies and held senior technology leadership roles at Google, Fairchild Imaging, and BAE Systems. He is known for defining long-term technology vision and leading complex engineering organizations where discipline, scale, and execution are critical.

Link: https://www.bsemis.com/ 

PS: Bharat Semi should not be confused with Bharath Semiconductors, Bharat Semitech, or Bharat Semiconductor Society.