Breaking Si Pixel Speed Limit

MDPI paper "Toward the Super Temporal Resolution Image Sensor with a Germanium Photodiode for Visible Light" by Nguyen Hoai Ngo, Anh Quang Nguyen, Fabian M. Bufler, Yoshinari Kamakura, Hideki Mutoh, Takayoshi Shimura, Takuji Hosoi, Heiji Watanabe, Philippe Matagne, Kazuhiro Shimonomura, Kohsei Takehara, Edoardo Charbon, and Takeharu Goji Etoh from Ritsumeikan University, Hanoi University of Science and Technology, IMEC, Osaka Institute of Technology, Osaka University, Link Research Corporation, Kindai University, and EPFL presents Ge PD to overcome the Si speed limit:

"The theoretical temporal resolution limit tT of a silicon photodiode (Si PD) is 11.1 ps. We call “super temporal resolution” the temporal resolution that is shorter than that limit. To achieve this resolution, Germanium is selected as a candidate material for the photodiode (Ge PD) for visible light since the absorption coefficient of Ge for the wavelength is several tens of times higher than that of Si, allowing a very thin PD. On the other hand, the saturation drift velocity of electrons in Ge is about 2/3 of that in Si. The ratio suggests an ultra-short propagation time of electrons in the Ge PD. However, the diffusion coefficient of electrons in Ge is four times higher than that of Si. Therefore, Monte Carlo simulations were applied to analyze the temporal resolution of the Ge PD. The estimated theoretical temporal resolution limit is 0.26 ps, while the practical limit is 1.41 ps. To achieve a super temporal resolution better than 11.1 ps, the driver circuit must operate at least 100 GHz. It is thus proposed to develop, at first, a short-wavelength infrared (SWIR) ultra-high-speed image sensor with a thicker and wider Ge PD, and then gradually decrease the size along with the progress of the driver circuits."

Fairchild Imaging Starts Sampling its 3rd Generation sCMOS Sensor with 0.5e- Read Noise, Demos Imaging at 0.0007 Lux Illumination

While BAE Fairchild Imaging has announced the HWK4123 sensor in February, its sampling starts just now:

"The HWK4123 4/3” 4K-120 image sensor features BAE Systems’ latest sCMOS 3.0 technology. We have advanced the state of the art in low- light imaging by achieving 0.5 electron RMS read noise while providing world-class BSI visible and NIR quantum efficiency. HWK4123 is ready now for designing your next high-performance low-light imaging system.

The 9Mp HWK4123 enables night vision cameras to image below starlight, or 0.001Lux. HWK4123’s ultra-low-light imaging capability is perfect for military situational awareness and commercial surveillance applications, where compromise is not an option for threat detection and identification. Recent moonless starlight field trials have shown excellent performance at 0.0007 Lux, while achieving superior resolution to legacy I2T technology."

The picture below is said to be taken at 0.0007 lux illumination:

A product page gives more details about the new sensor:

Trinamix Molecular Sensing for Smartphones

VentureBeat publishes an article on Trinamix intention to enter smartphone market with its multispectral sensors for materials identification:

"The technology is called near-infrared spectroscopy, and it uses laser light to detect the molecular vibrations that distinguish different substances.

Trinamix said it intends to build a potent, yet miniaturized infrared sensing module for integration into smartphones. The module sends out infrared light, which is reflected from the object and detected by the sensor. The company said breakthroughs in research enabled it to reduce the size of the device down to a smartphone form factor while ensuring high-volume production capacities."

Metalens Paper

APL Photonics paper "CMOS-compatible all-dielectric metalens for improving pixel photodetector arrays" by E. Mikheeva, J.-B. Claude, M. Salomoni,  J. Wenger,  J. Lumeau,  R. Abdeddaim,  A. Ficorella,  A. Gola,  G. Paternoster, M. Paganoni, E. Auffray,  P. Lecoq, and  S. Enoch from Institut Fresnel, Multiwave Imaging, University of Milano-Bicocca, CERN, FBK, and Multiwave Metacrystal SA proposes an improvement in SPAD array sensitivity:

"Metasurfaces and, in particular, metalenses have attracted large interest and enabled various applications in the near-infrared and THz regions of the spectrum. However, the metalens design in the visible range stays quite challenging due to the smaller nanostructuring scale and the limited choice of lossless CMOS-compatible materials. We develop a simple yet efficient design of a polarization-independent, broadband metalens suitable for many CMOS-compatible fabrication techniques and materials and implement it for the visible spectral range using niobium pentoxide (Nb2O5). The produced metalens demonstrates high transmittance and focusing ability as well as a large depth of focus, which makes it a promising solution for a new generation of silicon photomultiplier photodetectors with reduced fill factor impact on the performance and reduced electron–hole generation regions, which altogether potentially leads to improved photodetection efficiency and other characteristics."

Qualcomm's Spectra 580 ISP: The Future of Photography?

Qualcomm unveils the its latest triple ISP at 2020 Tech Summit:

Samsung Compares DTI with Skyscrapers, Promises 0.6X um Pixel Soon

The recent Samsung Investor Forum presentation from Nov 24, 2020 by System LSI Group EVP Park Yong-in shows the company's plans to introduce 0.6X um pixel and compares its DTI aspect ratio with skyscrapers:

Terabee Introduction to ToF Sensing

 Terabee publishes a video explaining ToF principles:

GPixel Expands 2.5um GS Family with 18MP Sensor

Gpixel expands the C-Mount GMAX product family with the GMAX2518, a 1” format Global Shutter CMOS sensor for industrial applications. The sensor is designed around the proven 2.5 µm charge domain global shutter pixel, provides 4508(H) x 4096(V) resolution (18 MP), and supports up to 64fps with 12bit output and 150fps with 10bit output.

The 2.5 um pixel achieves a FWC of 8k e-, read noise less than 2 e- and maximum DR of 66dB. The sensor provides a peak QE of 65%, a PLS of -80dB.

With an outer dimension of 20.8 mm x 19.5 mm, GMAX2518’s 226-pin LGA ceramic package is designed to fit easily into a standard 29 mm x 29 mm camera housing.

“We are excited to offer customers another sensor in this very popular 2.5um-pixel family, now
supporting 4 unique cameras from only 1 hardware design. The expansion of Gpixel’s line up of C-mount compatible global shutter sensors empowers our customers to develop a broad portfolio of high performance cameras in the most resource efficient and cost effective way possible. This product is part of our fast growing GMAX product family, which we will continue to expand in the near future to help our customers make the most of their investment in Gpixel,” says Wim Wuyts, CCO of Gpixel.

GMAX2518 engineering samples can be ordered now for delivery in December 2020.

ST Claims #1 Position in ToF Sensors

ST publishes an investor presentation on its AMS (Analog, MEMS & Sensors) Group's business positioning itself as #1 ToF company:

Digitimes on Sony CIS Business

Digitimes Research reviews recent Sony CIS sales forecasts:

Sony CIS "sales for fiscal 2020 (April 2020-March 2021) to fall 11.8% on year compared to a 6.5% decline estimated earlier, due mainly to slackened demand for handset applications as global handset sales are projected to shrink by 10% in 2020, according to Digitimes Research.

...the estimated sales shrinkage will lead to an on-year reduction of 65.6% in fiscal 2020 operating incomes for the I&SS unit.

Sony has cut its budget for a three-year investment plan ending March 2021 by 12.9% to JPY610 billion (US$5.84 billion) from JPY700 billion. It is also actively exploring new clients to offset the loss of orders from Huawei, and developing AI-enabled CIS products in cooperation with Microsoft to boost competitiveness in the market, while also contracting TSMC to fabricate 3D-stacked image signal processors, according to Digitimes Research."