Nokia 2330 camera phone reverse engineering revealed that it uses two suppliers for its VGA camera module: ST with Heptagon wafer-scale optics and Toshiba with Anteryon wafer optics. Both ST and Toshiba sensors have 2.2um pixels and use 0.18um process.
Omnivision's OVM7692 VGA CameraCube report flyer shows its 1.75um pixel layout at the poly and diffusion level showing quite nice fill factor and no SEL transistor:
Another Omnivision's 1.75um pixel is used in 5MP OV5650 taken from iPhone 4. That one is using 0.11um BSI process.
iPhone 4S camera has also been reverse engineered and Sony's 8MP BSI IMX145 sensor identified, made in 90nm process. For both iPhone back and front cameras, Tong Hsing (former ImPac) was identified as ceramic packaging supplier and LG Innotek as the module vendor.
Samsung Galaxy S II 8MP camera uses Samsung's S5K3H2Y sensor based on 1.4um BSI pixels in 90nm process.
Sony Ericsson S006 camera-phone module features Sony-made 16MP array of 1.12um BSI pixels. The module uses piezoelectric AF and has quite densely packed optics:
I did cross over to the dark side and now I have an iPhone 4S. The camera is pretty good for an itty bitty lens. I am not wild about the "HDR" mode. AF is good enough to fill the screen with a business card but is a little bouncy. I wonder if that is due to voicecoil hysteresis or poor algorithm design? Anyway, I like the Sony image sensor.
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