Thursday, June 30, 2016
Pinned Photodiode Fundamentals
Delft University publishes a very nice PhD Thesis "Fundamental Characteristics of a Pinned Photodiode CMOS Pixel" by Yang Xu. Other than a lot of basic stuff on PPD principles and characterization, the thesis discusses some of the more advanced things, like optimizations for image lag and charge transfer speed:
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Great work and thanks for sharing!
ReplyDeleteT-shaped tranfer gate is a kind of traditional transfer gate.
ReplyDeleteToshiba CIS team developed this T shaped transfer gate more than 15 years ago.
The T shaped gate accomplished world 1st perfect transfer pinned photodiode.
A revese work paer showed the Toshiba T shaped transfer gate in IISW 2007.
The T shaped gate CIS were used in many Nokia (Microsoft) handy phones.
I think that many European CIS engineers knew this story.
Old Toshiba engineer
T-shaped tranfer gate is a kind of traditional transfer gate.
ReplyDeleteToshiba CIS team developed this T shaped transfer gate more than 15 years ago.
The T shaped gate accomplished world 1st perfect transfer pinned photodiode.
A revese work paer showed the Toshiba T shaped transfer gate in IISW 2007.
The T shaped gate CIS were used in many Nokia (Microsoft) handy phone.
I think that many European CIS engineers knew this story.
Old Toshiba engineer
Well to be honest with you, the T-shape transfer gate is something that I learned from my new colleagues in 1983 at the time I joined Philips. They used these T-gates to enhance the charge transfer in CCDs. So it is really much older than you think .... History is repeating itself ....
ReplyDelete