Global TCAD Solutions GmbH, a spin-off from Vienna University of Technology (TU Wien), Austria, presents its tools for CIS pixel simulations:
One common type of APS cell consists of a Pinned Photodiode (PPD) with four NMOS transistors. Such structure can be Backside Illuminated (BSI) or use a transfer gate (TG) transistor with vertical channel for more compact pixels. This produces a 3D cell structure, with:
- A pinned photodiode (PPD),
- adjacent Transfer Gate (TG) transistor and Floating Diffusion (FD) region,
- a readout circuit, usually consisting of
Source Follower Attenuator (SFA)
Reset (RST)
Row Select (RS) transistors
Only device sim.?
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