CMOS image sensor pixel with 0.5 noise electrons RMS – CAELESTE
- The RTS noise and 1/f noise is reduced by cycling the MOSFET between inversion and accumulation to produced un-correlated noise which when sampled become “white”.
- A CTIA configuration was used and a very high conversion gain of nearly 1000uV/e- was reported.
- When the cycling of the MOSFET was not used a 2e- readout noise was obtained. While when the cycling was performed a 0.5e- readout noise at dark was measured. However it mentioned that the measurements showed variance and it might be due to the CVF. The research institutes and PhDs were invited to do an independent confirmation!