| Micron 1.7um Workshop on Advanced Image Sensors 2005 | Micron ISSCC 2007 | Samsung IEDM 2006 | ST IEDM 2006 | ST IEDM 2006 1.45um pixel (very preliminary) | |
| Full Well Saturation Charge | 9Ke linear | ~6Ke (estimation) | >10Ke | 8Ke | 4Ke (not optimized) |
| Temporal Noise | 2.8e pixel only | 3.8e full path, 8MP imager | <10e> | 3e pixel only | No Data |
| Dark Current at 60C | ~25e/s (estimation) | No data | <10e/s> | 25e/s | 15e/s |
| Image Lag | No data | No data | 0 | 0 | 0 |
| Metallization | Al | Al | Cu | Cu | Cu |
Wednesday, December 20, 2006
1.75um Pixel Generation Comparison
So far 3 companies announced 1.75um pixel generation parameters: Micron, ST and Samsung. The comparison below is based on IEDM 2006 presentation by ST and Samsung and ISSCC 2007 abstract by Micron. For comparison, Micron old data on 1.7um pixel presented in 2005 on IEEE Workshop on CCD and Advanced Image Sensors is given too. Also, ST preliminary data on 1.45um pixel is added at the last column, as presented on the recent IEDM.
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