303-Megaframes-per-Second Image Sensor

MDPI starts publishing a Special Issue on Recent Advances in CMOS Image Sensor with a paper "A Dual-Mode 303-Megaframes-per-Second Charge-Domain Time-Compressive Computational CMOS Image Sensor" by Keiichiro Kagawa, Masaya Horio, Anh Ngoc Pham, Thoriq Ibrahim, Shin-ichiro Okihara, Tatsuki Furuhashi, Taishi Takasawa, Keita Yasutomi, Shoji Kawahito, and Hajime Nagahara from Shizuoka University and Osaka University.

"An ultra-high-speed computational CMOS image sensor with a burst frame rate of 303 megaframes per second, which is the fastest among the solid-state image sensors, to our knowledge, is demonstrated. This image sensor is compatible with ordinary single-aperture lenses and can operate in dual modes, such as single-event filming mode or multi-exposure imaging mode, by reconfiguring the number of exposure cycles. To realize this frame rate, the charge modulator drivers were adequately designed to suppress the peak driving current taking advantage of the operational constraint of the multi-tap charge modulator. The pixel array is composed of macropixels with 2 × 2 4-tap subpixels. Because temporal compressive sensing is performed in the charge domain without any analog circuit, ultrafast frame rates, small pixel size, low noise, and low power consumption are achieved. In the experiments, single-event imaging of plasma emission in laser processing and multi-exposure transient imaging of light reflections to extend the depth range and to decompose multiple reflections for time-of-flight (TOF) depth imaging with a compression ratio of 8× were demonstrated. Time-resolved images similar to those obtained by the direct-type TOF were reproduced in a single shot, while the charge modulator for the indirect TOF was utilized."