Wednesday, May 13, 2009

ST and Soitec Join Forces in BSI Push

ST and Soitec announced an exclusive joint cooperation between the two companies that will lead to the development of 300mm wafer-level BSI technology for next-generation image sensors in consumer products. The agreement between the two companies includes the licensing by Soitec to ST of the Smart Stacking™ bonding technology for the manufacturing of backside-illumination sensors on 300mm wafers. This technology, developed by Soitec’s Tracit business unit, leverages molecular bonding, and mechanical, as well as chemical thinning. ST will develop a new generation of image sensors based on its advanced derivative-CMOS process technology at 65nm and beyond, at its 300mm facility in Crolles, France.

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