It was brought to my attention that SiOnyx has presented its recent results at Orlando SPIE conference in April 2010. Here is the abstract:
Black silicon enhanced photodetectors: a path to IR CMOS
M. U. Pralle, J. E. Carey, SiOnyx Inc. (United States)
"SiOnyx has developed a next generation silicon based photodetector with spectral sensitivity from 350 to 1300 nm. By doping silicon with sulfur using femtosecond laser processing, we enhance the spectral sensitivity of silicon enabling high performance infrared detection on a CMOS compatible chip well beyond the bandgap cutoff of traditional silicon. These detectors exhibit enhanced QE, photoconductive gain, (with responsivities in excess of 100 A/W) and compelling low noise performance. Absolute noise characterization coupled with spectral responsivity characterization indicate measured detectivity (D*) of 1x10^14 Jones at 940nm, roughly a factor of 10 higher than the best silicon photodetectors. Operating at mere 3V these devices rival avalanche photodiodes at much lower power and bias. When applied to imaging platforms, this detector will enhance visible light imaging and will enable silicon to become the next generation nightvision detector, outperforming incumbent technologies in nearly all nighttime light conditions."
Update: A.T. and F.R. kindly provided me more information on this SPIE paper. SiOnyx reports 68% QE at 940nm wavelength and "greater than 10%" QE at 1107nm. The dark current was reported to be 140pA/sq.cm at unspecified cryogenic temperature. The diode structures of Black Silicon were made in commercial CMOS foundry: