CMOS Image Sensor in 110nm Technology",
Two floating diffusions FD1 and FD2 are needed to provide high and low conversion gain paths for low light and strong light signals. The maximum charge is limited by either FD2 capacity or PD well. The reported pixel full well is 51750e-.
In order to reduce the image lag, the two transfer gates are placed in the corners on the same side:
Another recently published thesis based on CMOSIS global shutter work is "The Design of a Global Shutter CMOS Image Sensor in 110nm Technology" by Xiaoliang Ge. The thesis has many interesting details on shrinking CMOSIS 8T global shutter pixel to 4.8um in 0.11um process:
Thanks to TH for the link!