Some of these technologies are based on sensors and optics. Primesense uses structured light 3D camera. Softkinetic and PMD use ToF cameras. Philips relies on IR triangulation for its motion sensing remote.
Sunday, November 04, 2012
Next Generation TV Interface Technologies
Digitimes Research published a nice map of interface technologies battling for the next generation TV control:
Some of these technologies are based on sensors and optics. Primesense uses structured light 3D camera. Softkinetic and PMD use ToF cameras. Philips relies on IR triangulation for its motion sensing remote.
Some of these technologies are based on sensors and optics. Primesense uses structured light 3D camera. Softkinetic and PMD use ToF cameras. Philips relies on IR triangulation for its motion sensing remote.
Saturday, November 03, 2012
Truesense Reports SNR10 of 7 lux for its 12MP CMOS Sensor
Keith Wetzel, a member of Truesense Imaging business development group, twitted that the new 12MP 4.7um pixel KAC-12040 CMOS image sensor "has an SNR10 value of ~7 lux." The lens aperture is not specified.
Sony Reports Higher Image Sensor Sales but Lowers Forecast
Slide 11 of Sony Q2 FY2012 earnings presentation says that "sales of ... image sensors are expected to be lower than previously anticipated, segment sales are expected to be lower than the August forecast". No reason for the forecast reduction is given.
Seeking Alpha earnings call transcript quotes Yoshinori Hashitani, Sony VP Investor Relations, saying that last quarter "sales of the image sensors increased because of strong demand of smartphones and other products".
Seeking Alpha earnings call transcript quotes Yoshinori Hashitani, Sony VP Investor Relations, saying that last quarter "sales of the image sensors increased because of strong demand of smartphones and other products".
Friday, November 02, 2012
High Speed Imaging Circa 1980
This Youtube video teardown shows internal design of Kodak Spin Physics high-speed digital camera, originally released in 1980. The camera had a resolution of 240x192 and frame rate of 2000fps - quite impressive numbers for a 30+ year old technology based on 34um pixels:
Here is the sensor's corner snapshot from the video:
Here is the sensor's corner snapshot from the video:
Altasens Talks about Stacked Sensor Advantages
Altasens' patent application US20120267511 "Image sensor with hybrid heterostructure" by Lester Kozlowski has few interesting claims:
First, a stacked sensor structure is proposed:
The pixel array uses "optimized" pmos transistors. An example pixel capable of GS, S&H and CDS is shown on Fig. 6:
The main advantages of the stacked structure are (1) very good global shutter efficiency and (2) lower noise due to a special pmos transistor "optimization":
"FIGS. 7 and 8 [not shown here] compare the read noise achievable with optimized PMOS technology vs. standard CMOS technology wherein the source follower is formed in NMOS having flicker noise lower than readily achieved in common foundry processes, i.e., very good compared to what is readily available. Even so, the PMOS global shutter can yield a read noise of 1 e− (or holes) at a sense capacitance of 5 fF. The NMOS global shutter circuit instead has read noise of 3.5 e− at 5.5 fF. More importantly for long term development, the PMOS solution goes well below 1 e−0 as the sense capacitance is reduced while the NMOS solution plateaus well above 2 e−."
First, a stacked sensor structure is proposed:
The pixel array uses "optimized" pmos transistors. An example pixel capable of GS, S&H and CDS is shown on Fig. 6:
The main advantages of the stacked structure are (1) very good global shutter efficiency and (2) lower noise due to a special pmos transistor "optimization":
"FIGS. 7 and 8 [not shown here] compare the read noise achievable with optimized PMOS technology vs. standard CMOS technology wherein the source follower is formed in NMOS having flicker noise lower than readily achieved in common foundry processes, i.e., very good compared to what is readily available. Even so, the PMOS global shutter can yield a read noise of 1 e− (or holes) at a sense capacitance of 5 fF. The NMOS global shutter circuit instead has read noise of 3.5 e− at 5.5 fF. More importantly for long term development, the PMOS solution goes well below 1 e−0 as the sense capacitance is reduced while the NMOS solution plateaus well above 2 e−."
Toshiba Announces 8MP 1/3.2-inch BSI Sensor
Toshiba published a product page of 8MP 1.4um BSI pixel-based T4K34 sensor. The sensor did not appear on the previously published Toshiba roadmap. The new sensor is quite fast, delivering 30fps at full resolution and the same frame rate in 1080p mode. Its ADC resolution is selectable between 8b or 10b.
Thursday, November 01, 2012
Digital Camera Sensors Database
The new Digital Camera Database has an information on pixel size, sensor areas and more from 3281 digital cameras. The information is nicely presented in graphical and numerical form. It's hard to believe that the whole web site is just one-man job!
Thanks to GB for the link!
Thanks to GB for the link!
Kasalis Announces Pixid 300 Pro Availability
Kasalis announces the release of its Pixid 300 line of fully automated camera module assembly and test systems, featuring its active alignment technology. The Pixid 300 Pro and Pixid 300 Test models are now available for shipment.
"The increasing demands for improved image quality in mobile cameras has transformed the camera module industry, which now needs a cost-effective solution to meet the higher level of precision required in the alignment process," said Justin Roe, president of Kasalis. "The Pixid 300 Pro is a clear breakthrough that is changing the cost-benefit equation of active alignment for the whole industry. We have created a disruptive technology – the Pixid 300 Pro performs pre-dispense tests, adhesive dispense, dispense verification, active alignment, UV cure, and post-alignment tests all within 15 seconds, with a throughput of over 240 units per hour, and all for very competitive pricing."
The Pixid 300 Pro model is a fully automated manufacturing system featuring active alignment, customizable optical testing options, Adaptive Intelligence SPC, and automated adhesive dispense and UV cure. Each stage of assembly is performed in parallel to obtain the fastest possible throughput time. Adaptive Intelligence is a software suite that is embedded in the Pixid systems and improves the alignment process by using the machine feedback to improve its algorithms, thereby attaining faster speeds and improved yields. In addition to the Pixid 300 Pro, the series includes the Pixid 300 Test model, which is intended purely for the automated functional testing of camera modules.
The Pixid 300 series systems are designed for high volume production of camera modules such as those used in smartphones, automotive applications, webcams, medical imaging, and security cameras. Kasalis has designed all of the Pixid systems to solve industry challenges, provide easy upgrading and maintenance through modular parts, and to align a camera lens to a sensor in up to six degrees of freedom to obtain the best possible focus quality across the entire image sensor. As technology in mobile electronics advances, camera modules assembled with precision alignment are increasingly important.
"The increasing demands for improved image quality in mobile cameras has transformed the camera module industry, which now needs a cost-effective solution to meet the higher level of precision required in the alignment process," said Justin Roe, president of Kasalis. "The Pixid 300 Pro is a clear breakthrough that is changing the cost-benefit equation of active alignment for the whole industry. We have created a disruptive technology – the Pixid 300 Pro performs pre-dispense tests, adhesive dispense, dispense verification, active alignment, UV cure, and post-alignment tests all within 15 seconds, with a throughput of over 240 units per hour, and all for very competitive pricing."
The Pixid 300 Pro model is a fully automated manufacturing system featuring active alignment, customizable optical testing options, Adaptive Intelligence SPC, and automated adhesive dispense and UV cure. Each stage of assembly is performed in parallel to obtain the fastest possible throughput time. Adaptive Intelligence is a software suite that is embedded in the Pixid systems and improves the alignment process by using the machine feedback to improve its algorithms, thereby attaining faster speeds and improved yields. In addition to the Pixid 300 Pro, the series includes the Pixid 300 Test model, which is intended purely for the automated functional testing of camera modules.
The Pixid 300 series systems are designed for high volume production of camera modules such as those used in smartphones, automotive applications, webcams, medical imaging, and security cameras. Kasalis has designed all of the Pixid systems to solve industry challenges, provide easy upgrading and maintenance through modular parts, and to align a camera lens to a sensor in up to six degrees of freedom to obtain the best possible focus quality across the entire image sensor. As technology in mobile electronics advances, camera modules assembled with precision alignment are increasingly important.
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| Pixid 300 Pro |
Workshop on Radiation Effects in Optoelectronic Detectors
2nd Workshop on Radiation Effects in Optoelectronic Detectors is to be held on November 28-29, 2012 in Toulouse, France, co-organised by CNES, ASTRIUM, THALES ALENIA SPACE, SODERN, ISAE. The program has papers devoted to radiation damage in CCD and CMOS senosrs:
Investigations on performance of Electron Multiplied CCD detectors (EMCCDs) after radiation for observation of low light star-like objects in scientific space missions
H. Michaelis, T. Behnke, S. Mottola, A. Krimlowski, German Aerospace Center, DLR, Institute of Planetary Research, Berlin (Germany), A. Holland, XCAM Ltd, Northampton, (UK), M. Schmid, Ingenieurbüro Schmid, Berlin (Germany)
The GAIA Radiation test campaigns: an historical review
D. Marchais, ASTRIUM SAS
A Comparison of Radiation Damage in CCDs From a Number of Flight Programmes
P. Jerram, E2V technologies
In-Orbit Results from CNES Satellite CCDs
A. Bardoux, A. Penquer, O. Gilard, R. Ecoffet, CNES, M. Auvergne, LESIA
Response of 3T and 4T Multi-Variant CMOS Image Sensors to Proton Radiation
A. Pike, J. Pratlong E2V Technologies
New Radiation Test Results on HAS2 CMOS Image Sensor
D. Hervé, M. Beaumel, SODERN, D. Van Aken, ON Semiconductor
Dark current degradation of a 5T 0.18µm e2v CMOS image sensor under gamma and proton irradiation
T. Nuns, J.P. David, ONERA, E. Martin, O. Gilard, CNES
CMOS monolithic sensors for vertex detector applications: TID effects and bulk damage study
L. Ratti, S. Zucca, Università di Pavia and INFN Pavia, L. Gaioni, INFN Pavia, G. Traversi, Università di Bergamo and INFN Pavia, S. Bettarini, G. Rizzo, Università di Pisa and INFN Pisa, F. Morsani, INFN Pisa, L. Bosisio, I. Rashevskaya, Università di Trieste and INFN Trieste
Radiation Effects in CMOS Image Sensor Isolation Oxides: Differences and Similarities with Thermal Oxides
M. Gaillardin, C. Marcandella, M. Martinez, P. Paillet, S. Girard, CEA DAM DIF, V. Goiffon, P. Magnan, M. Estribeau, ISAE, Image Sensor Research Team
Radiation Effects on Pinned Photodiode CMOS Image Sensors: Overview of Pixel Performance Degradation Due to Total Ionizing Dose
V. Goiffon, M. Estribeau, O. Marcelot, P.Cervantes, P. Magnan, P. Martin-Gonthier, R. Molina, F. Corbière, ISAE, Image Sensor Research Team, M. Gaillardin, S. Girard, P. Paillet,C. Marcandella, CEA DAM DIF, C. Virmontois, (Formerly at ISAE, now at CNES)
Recent radiation testing on 180 nm and 110 nm CMOS Image Sensor processes
J. Bogaerts, K. Van Wichelen, E. Gillisjans, G. Lepage, G. Meynants, CMOSIS nv
Displacement Damage Effects on Pinned Photodiode CIS
C. Virmontois, A. Bardoux, CNES, V. Goiffon, P. Magnan, F. Corbière, ISAE, Image Sensor Research Team, S. Girard, CEA DAM DIF
Single Event Effects in CMOS Image Sensors
V. Lalucaa, V. Goiffon, P. Magnan, ISAE, Image Sensor Research Team, G. Rolland, S. Petit, CNES
Vulnerability of CMOS image sensors in megajoule class laser harsh environment
P. Paillet, S. Girard, O. Duhamel, J.-L. Bourgade, S. Darbon, A. Rousseau, CEA, DAM, DIF, V. Goiffon, A. Chabane, P. Magnan, P. Cervantes, P. Martin-Gonthier, M. Estribeau, ISAE, Image Sensor Research Team, J. Baggio, CEA CESTA, V. Yu. Glebov, G. Pien, and T. C. Sangster, LLE, University of Rochester
Development of radiation tolerant EUV detectors and hybrid imagers
P. de Moor, IMEC
Specific tools developed for radiation tests at cryogenic temperature
A. Le Paih, F. Perrier, SOFRADIR
Radiation results on cooled infrared detectors
F. Perrier, A. Le Paih, SOFRADIR
Radiation testing of the MSI and Proba-V linear arrays
J. Vermeiren, Xenics
Evaluation of InGaAs array detector suitability to space environment
L. Tauziède, K. Beulé, M. Boutillier, F. Bernard, CNES, J. L. Reverchon, Alcatel-Thales-III-V Lab, A. Buffaz, Pléiades technologies
Prototype ASIC development for space large format NIR/SWIR detector array
P. Gao, B. Dupont, B. Dierickx, Caeleste, G. Verbruggen, S. Gielis, EASICS
Roscosmos Test Facilities For Optoelectronic Devices Space Radiation Hardness Control
V. Anashin, G. Protopopov, P. Chubunov, A. Kozyukov, Institute Of Space Device Engineering
The Development of Displacement Damage Test Guidelines for Imaging Devices
M. Robbins, Surrey Satellite Technology Limited
The workshop also has few tutorials:
Space Radiation Environment
Robert Ecoffet, CNES
Degradation mechanisms and impact on performances: Total ionizing dose effects
Jean-Pierre David, Thierry Nuns, ONERA
Degradation mechanisms and impact on performances: Displacement damage effects
Christophe Inguimbert, ONERA
Registration is free of charge, but requires mandatory on-line registration (before November 23rd): http://cnes.cborg.net/cct/bipublicgb.html
Thanks to AT for sending me the program!
Investigations on performance of Electron Multiplied CCD detectors (EMCCDs) after radiation for observation of low light star-like objects in scientific space missions
H. Michaelis, T. Behnke, S. Mottola, A. Krimlowski, German Aerospace Center, DLR, Institute of Planetary Research, Berlin (Germany), A. Holland, XCAM Ltd, Northampton, (UK), M. Schmid, Ingenieurbüro Schmid, Berlin (Germany)
The GAIA Radiation test campaigns: an historical review
D. Marchais, ASTRIUM SAS
A Comparison of Radiation Damage in CCDs From a Number of Flight Programmes
P. Jerram, E2V technologies
In-Orbit Results from CNES Satellite CCDs
A. Bardoux, A. Penquer, O. Gilard, R. Ecoffet, CNES, M. Auvergne, LESIA
Response of 3T and 4T Multi-Variant CMOS Image Sensors to Proton Radiation
A. Pike, J. Pratlong E2V Technologies
New Radiation Test Results on HAS2 CMOS Image Sensor
D. Hervé, M. Beaumel, SODERN, D. Van Aken, ON Semiconductor
Dark current degradation of a 5T 0.18µm e2v CMOS image sensor under gamma and proton irradiation
T. Nuns, J.P. David, ONERA, E. Martin, O. Gilard, CNES
CMOS monolithic sensors for vertex detector applications: TID effects and bulk damage study
L. Ratti, S. Zucca, Università di Pavia and INFN Pavia, L. Gaioni, INFN Pavia, G. Traversi, Università di Bergamo and INFN Pavia, S. Bettarini, G. Rizzo, Università di Pisa and INFN Pisa, F. Morsani, INFN Pisa, L. Bosisio, I. Rashevskaya, Università di Trieste and INFN Trieste
Radiation Effects in CMOS Image Sensor Isolation Oxides: Differences and Similarities with Thermal Oxides
M. Gaillardin, C. Marcandella, M. Martinez, P. Paillet, S. Girard, CEA DAM DIF, V. Goiffon, P. Magnan, M. Estribeau, ISAE, Image Sensor Research Team
Radiation Effects on Pinned Photodiode CMOS Image Sensors: Overview of Pixel Performance Degradation Due to Total Ionizing Dose
V. Goiffon, M. Estribeau, O. Marcelot, P.Cervantes, P. Magnan, P. Martin-Gonthier, R. Molina, F. Corbière, ISAE, Image Sensor Research Team, M. Gaillardin, S. Girard, P. Paillet,C. Marcandella, CEA DAM DIF, C. Virmontois, (Formerly at ISAE, now at CNES)
Recent radiation testing on 180 nm and 110 nm CMOS Image Sensor processes
J. Bogaerts, K. Van Wichelen, E. Gillisjans, G. Lepage, G. Meynants, CMOSIS nv
Displacement Damage Effects on Pinned Photodiode CIS
C. Virmontois, A. Bardoux, CNES, V. Goiffon, P. Magnan, F. Corbière, ISAE, Image Sensor Research Team, S. Girard, CEA DAM DIF
Single Event Effects in CMOS Image Sensors
V. Lalucaa, V. Goiffon, P. Magnan, ISAE, Image Sensor Research Team, G. Rolland, S. Petit, CNES
Vulnerability of CMOS image sensors in megajoule class laser harsh environment
P. Paillet, S. Girard, O. Duhamel, J.-L. Bourgade, S. Darbon, A. Rousseau, CEA, DAM, DIF, V. Goiffon, A. Chabane, P. Magnan, P. Cervantes, P. Martin-Gonthier, M. Estribeau, ISAE, Image Sensor Research Team, J. Baggio, CEA CESTA, V. Yu. Glebov, G. Pien, and T. C. Sangster, LLE, University of Rochester
Development of radiation tolerant EUV detectors and hybrid imagers
P. de Moor, IMEC
Specific tools developed for radiation tests at cryogenic temperature
A. Le Paih, F. Perrier, SOFRADIR
Radiation results on cooled infrared detectors
F. Perrier, A. Le Paih, SOFRADIR
Radiation testing of the MSI and Proba-V linear arrays
J. Vermeiren, Xenics
Evaluation of InGaAs array detector suitability to space environment
L. Tauziède, K. Beulé, M. Boutillier, F. Bernard, CNES, J. L. Reverchon, Alcatel-Thales-III-V Lab, A. Buffaz, Pléiades technologies
Prototype ASIC development for space large format NIR/SWIR detector array
P. Gao, B. Dupont, B. Dierickx, Caeleste, G. Verbruggen, S. Gielis, EASICS
Roscosmos Test Facilities For Optoelectronic Devices Space Radiation Hardness Control
V. Anashin, G. Protopopov, P. Chubunov, A. Kozyukov, Institute Of Space Device Engineering
The Development of Displacement Damage Test Guidelines for Imaging Devices
M. Robbins, Surrey Satellite Technology Limited
The workshop also has few tutorials:
Space Radiation Environment
Robert Ecoffet, CNES
Degradation mechanisms and impact on performances: Total ionizing dose effects
Jean-Pierre David, Thierry Nuns, ONERA
Degradation mechanisms and impact on performances: Displacement damage effects
Christophe Inguimbert, ONERA
Registration is free of charge, but requires mandatory on-line registration (before November 23rd): http://cnes.cborg.net/cct/bipublicgb.html
Thanks to AT for sending me the program!
Omnivision Launches OmniBSI+ CameraCubeChip
PRNewswire: OmniVision announces what it says is the industry's most compact VGA CameraCubeChip to date: the OVM7695. The camera module size is just 2.4 x 2.4 x 2.3 mm. The sensor is based on 1.75um OmniBSI+ pixel.
"Front-facing cameras have quickly become a defining feature in mobile devices. As these devices continue down the path of miniaturization, manufacturers are tasked with providing a better video recording experience within tighter space constraints," said Aaron Chiang, senior technical marketing manager at OmniVision.
The OVM7695 is currently sampling and is expected to enter volume production by the first quarter of 2013.
"Front-facing cameras have quickly become a defining feature in mobile devices. As these devices continue down the path of miniaturization, manufacturers are tasked with providing a better video recording experience within tighter space constraints," said Aaron Chiang, senior technical marketing manager at OmniVision.
The OVM7695 is currently sampling and is expected to enter volume production by the first quarter of 2013.
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