EI 2020 paper "An over 120dB dynamic range linear response single exposure CMOS image sensor with two-stage lateral overflow integration trench capacitors" by Yasuyuki Fujihara, Maasa Murata, Shota Nakayama, Rihito Kuroda, and Shigetoshi Sugawa from Tohoku University, Japan, achieves 70dB SNR in 16um pixel:
"This paper presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integration trench capacitors (LOFITreCs) exhibiting over 120dB dynamic range with 11.4Me- full well capacity (FWC) and maximum signal-to-noise ratio (SNR) of 70dB. The measured SNR at all switching points were over 35dB thanks to the proposed two-stage LOFITreCs."
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