Friday, February 07, 2014

Si NIR Photoresponse Extended to 1.2um

Tech-On reports that University of Tokyo, Kyushu University and NMEMS Technology Research Organization presented a new technology of improving the sensitivity of Si-based NIR sensor at IEEE MEMS 2014 conference conference held in San Francisco on Jan 26-30, 2014. Isao Shimoyama (University of Tokyo), Chihaya Adachi (Kyushu University), Yoshiharu Ajiki (exchange researcher at NMEMS Technology Research Organization, Olympus Corp)etc. extended the sensitivity to 1.2um "by adding 10nm-class metal nano structures to Si to increase electric current generated by receiving lights with certain wavelengths such as infrared light":

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