Tuesday, June 23, 2015

e2v IISW 2015 Papers On-Line

e2v publishes its IISW 2015 papers on its web site:

"Electron Multiplying Device Made on a 180 nm Standard CMOS Imaging Technology" by Pierre Fereyre, Frédéric Mayer, Mathieu Fournier, Clément Buton, Timothée Brugière, and Rémi Barbier presents electron multiplying CMOS pixel:


e2v also publishes another IISW paper: "CMOS Charge Transfer TDI with Front Side Enhanced Quantum Efficiency" by F. Mayer, S. Pesenti, F. Barbier, H. Bugnet, J. Endicott, F. Devriere, T. Ligozat
Posted by Vladimir Koifman at 21:17

1 comment:

  1. AnonymousJune 25, 2015 at 12:35 PM

    Very interesting researches !
    I'm looking forward to an industrial EMCMOS that could be used for
    astronomy imaging.
    EMCCD have a lot of drawbacks :
    - only small sensors are available for industrial application,
    - cost an arm or more !
    - very slow fps compared to recent CMOS,

    Do you think that this new technology will overpass all these
    drawbacks ?

    Thanks.

    ReplyDelete

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