"With rapid development of AI and MV technology, there will be a growing number of new applications that need CIS to get direct data for processing and analyzing. This will present much broader market opportunities for image sensors than ever before.
In order to meet the market needs, SmartSens has developed cost-effective, high-performance global shutter CIS for emerging AI and MV applications, i.e. the world's first BSI-based global shutter CMOS image sensor family (SmartGS). Because of its excellent signal-to-noise ratio, high sensitivity, and dynamics, the SmartGS image sensors are widely used in FA, code reader, intelligent sensing, and other fields.
SC031GS is the world’s first commercial-grade 300,000-pixel global shutter CMOS image sensor based on BSI pixel technology. BSI technology makes SC031GS more sensitive. Derived from high-end industrial CIS, SmartGS design technology guarantees low system noise, high-shutter efficiency, single-frame HDR, among other features. Because of these high performances, SC031GS is becoming popular in intelligent sensing (drone, robotics) and IoT industries. Designed for intelligent applications like face to vSLAM, optical flow, 2D-decoder, and gesture recognition, SC031GS’s design is fully considered about system solution. So, SC031GS is better suited for intelligent applications than other competitors."
Did they use ON Semi or CMOSIS GS pixel?
ReplyDeleteAny of them has BSI GS?
Deletehttp://www.imagesensors.org/Past%20Workshops/2011%20Workshop/2011%20Papers/R51_Meynants_BSIglobalshutter.pdf
DeleteSmartSens has been plagiarizing Omnivison's confidential information.
ReplyDeleteWhy do you think so? There are ST and TSMC patent applications, both openly published:
Deletehttps://image-sensors-world.blogspot.com/2017/05/tsmc-proposes-storage-node-screen-for.html
https://image-sensors-world.blogspot.com/2017/05/great-minds-think-alike.html
Samsung too published its ideas on that:
https://image-sensors-world.blogspot.com/2016/07/samsung-works-on-bsi-global-shutter.html
Read noise is ~11e. I think it is voltage domain GS pixel. Maybe MIM(2) is not large enough for 11e noise (3.744um pixel). If Mos cap is used, the inversion layer should be connected to ground to improve PLS for BSI. I guess it is not in-pixel CDS.
ReplyDelete