Sunday, August 29, 2010

CMOSIS Announced NIR-Enhanced Versions of its 5.5um-Pixel Products

CMOSIS announced NIR-enhanced versions of its 2.2MP CMV2000 and 4MP CMV4000 sensors. Both sensors are based on 5.5um pixels processed on 12um epi wafers. The thicker epi improves 900nm QE from 8% in the standard sensors to 18% in the NIR-enhanced one.

CMV2000 and CMV4000 E12 devices are available in sample quantities.

According to 2009 Strategies Unlimited presentation, such specialty sensors represent a nice chunk of the market, especially in revenue numbers:

8 comments:

  1. what means exactly NIT-enhanced CMOS sensor ?
    all the CMOS sensor has useful sensitivity in NOR range.

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  2. Well, CMOSIS says that IR QE has been improved in this new version of this sensors, as compared with the standard version.

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  3. what is the usage for such NIR-enhanced response ?

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  4. Near Infra-Red is a useful part of the spectrum in applications such as security, automotive, night vision, inspection and distance measurements. Imagers intended for imaging of the visible spectrum try to avoid near-IR sensitivity because it limits the contrast or MTF (especially with small pixels). That is the reason why consumer devices are being fabricated on thin epi-material (just a few um). But the near-IR can be enhanced by choosing a thicker epi-layer. Apparently that is what is being done by CMOSIS.

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  5. Thanks AT !

    But in this case, the NIR enhancement will come only from the minority carrier diffusion, right ?

    What is the approximative diffusion length in the classic Epi layer ? If 5.5um pixel pitch is used, the Epi should have 10omhs, I guess.

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  6. You can create electric field by using high energy implanter.

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  7. Does this tell us anything new about who CMOSIS uses as their fab?

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  8. For the CMV2000 and CMV4000, CMOSIS seems to use Tower as a fab, as we can read in this press release: http://www.cmosis.com/news/press_releases/2009/first_off-the-shelf_high_resolution_sensor
    Nothing new on that end thus..

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