Wednesday, March 23, 2016

VLSI Symposia Accepted Papers

VLSI Circuit and Technology Symposia to be held on June 13-17, 2016 in Honolulu, HI, publishes accepted paper list, with quite a few image sensor papers:
  • A 220pJ/Pixel/Frame CMOS Image Sensor with Partial Settling Readout Architecture, Ji, Stanford University
  • An 8.3M‐pixel 480fps Global‐Shutter CMOS Image Sensor with Gain‐Adaptive Column ADCs and 2‐on‐1 Stacked Device Structure, Oike, Sony
  • A Dead‐time Free Global Shutter CMOS Image Sensor with in‐pixel LOFIC and ADC using Pixel‐wise Direct Connections, Sugo, Tohoku Univ.
  • White Spots Reduction by Ultimate Proximity Metal Gettering at Carbon Complexes Formed underneath Contact Area in CMOS Image Sensors, Yamaguchi, Renesas Electronics Corporation
  • Enabling monolithic 3D image sensor using large-area monolayer transition metal dichalcogenide and logic/memory hybrid 3D+IC, Yang, National Nano Device Laboratories
  • Back‐illuminated voltage‐domain global shutter CMOS image sensor with 3.75┬Ám pixels and dual in‐pixel storage nodes, Stark, University of Edinburgh, UK
  • Broadband THz Spectroscopic Imaging based on Fully Integrated 4×2 Digital‐to‐Impulse Radiating Array with Full‐Spectrum of 0.03‐1.03THz in Silicon, Assefzadeh, Rice University
  • Novel Pixel Structure with Stacked Deep Photodiode to Achieve High NIR Sensitivity and High MTF, Takahashi Hiroki, TowerJazz
Also, the Circuit Symposium plenary session features Sony talk:

Accelerating the Sensing World through Imaging Evolution”, Tetsuo Nomoto, VP and SGM, SONY
The evolution of CMOS Image Sensors (CIS) and the future prospect of a “sensing” world utilizing advanced imaging technologies promise to improve our quality of life by sensing anything, anywhere, anytime. Charge Coupled Device image sensors replaced video camera tubes, allowing the introduction of compact video cameras as consumer products. CIS now dominates the market for digital still cameras created by its predecessor and, with the advent of column-parallel ADCs and back-illuminated technologies, outperforms them. CIS’s achieve better signal to noise ratio, lower power consumption, and higher frame rate. Stacked CIS’s continue to enhance functionality and user experience in mobile devices, a market that currently comprises over one billion new image sensors per year. CIS imaging technologies promise to accelerate the progress of sensing world by continuously improving image quality, extending detectable wavelengths, and further improving depth resolution and temporal resolution.


  1. I saw also this one, last paper on the Technology session list: C073 Novel Pixel Structure with Stacked Deep Photodiode to Achieve High NIR Sensitivity and High MTF,, TowerJazz


All comments are moderated to avoid spam.