"Quantum dots (QDs) can be a promising candidate to realize low-cost photodetectors due to its solution processability which enables the use of economical deposition techniques and the monolithic integration on the complementary metaloxide-semiconductor (CMOS) readout. Moreover, the electronic properties of QDs are dependent on both QD size and surface chemistry. Modification of quantum confinement provides control of the QD bandgap, ranging form from 0.7 to 2.1 eV which make it ideal candidate for the detection in the SWIR region. In addition, by selecting the appropriate ligand, the position of the energy levels can be tuned and therefore, n-type or p-type QDs can be achieved."
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