Tuesday, October 20, 2015

Olympus 2-layer RGB-IR Stacked Sensor

IEDM 2015 publishes the conference preview with few pictures from Olympus paper:

Paper 30.1 – “Multi-Storied Photodiode CMOS Image Sensor for Multiband Imaging with 3D Technology” Y. Takemoto, et al, Olympus

"Multiband Imaging in One Device: There is a growing demand for integrated imaging systems that can simultaneously capture both red-green-blue (RGB) visible light and near-infrared (NIR) wavelengths that contain range-finding, or depth-of-field, information. In medicine, for example, the ability to capture all of these wavelengths simultaneously with one compact device would make it easier and less time-consuming to identify and pinpoint a wide range of targets in different parts of the body, such as pathological lesions. Until now, however, trying to detect both RGB and NIR signals on the same chip would compromise either one or the other. Researchers at Olympus will detail how they used 3D wafer-stacking technology to integrate two separate CMOS imagers into one device, each optimized for either RGB or NIR through a careful balance of active silicon thickness and pixel size. The top imager is optimized for visible detection with an array of small pixels and a thinned 3µm active silicon layer. NIR signals pass through it to reach the bottom imager, which is optimized for NIR detection with an array of larger pixels and thick active silicon. The researchers say there is no degradation in color reproduction, sensitivity or resolution."

1 comment:

  1. It looks like having a (or two?) multilayered wiring structure(s) in the light path of the NIR sensor _is_ a compromise.

    Wouldn't it be better with tsw from the RGB PD to a wiring structure behind the NIR PD?


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