Conference List - January 2025

IEEE Applied Sensing Conference - 20-22 Jan 2025 - Hyderabad, India - Website

SPIE Photonics West - 25-30 Jan 2025 - San Francisco, CA, USA - Website

(Note that Electronic Imaging is in February in 2025)

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CVSENS raises series A funding

CVSENS is a high-performance CIS design company headquartered in Shenzhen:  http://www.cvsens.com/language/en/

Original news in Chinese: https://laoyaoba.com/n/919232

Translation from Google Translate:

AVC Semiconductor completes a new round of financing of hundreds of millions of yuan to accelerate the localization of high-end CMOS image sensor chips

Recently, CVSENS successfully completed its A round of financing of hundreds of millions of yuan. The financing was led by Hanlian Semiconductor Industry Fund , and co-invested with Zhejiang University Education Foundation and Shanghai Anchuang Chuangxin , which indicates the market's high recognition and confidence in CVSENS.

As a leading CMOS image sensor chip developer in China, Chuangshi Semiconductor focuses on the design and development of high-value-added CMOS image sensor chips, and is committed to providing customers with better quality and more efficient services and products. With more than 15 years of experience in high-end product development, the core team of Chuangshi Semiconductor has broken through the core technology barriers of high-end CIS in various application fields. At present, more than ten CIS chips have been launched, all of which have been successfully taped out at one time, covering multiple application directions such as smart security, low-power IoT, smart cars, and machine vision. Many of the industry's first innovative products have won unanimous praise from clients. In the future, Chuangshi Semiconductor will continue to deepen its image sensor technology, promote industrial upgrading, and lead the new direction of industry development.

Hanlian Semiconductor Industry Fund said: We are optimistic about the huge development space in the field of image sensors and the market opportunities for domestic manufacturers. The Chuangshi Semiconductor team has excellent technical capabilities, business focus and product innovation capabilities, and is a new force in the industry with comprehensive competitiveness. At the same time, working with Chuangshi Semiconductor is an important part of Hanlian Semiconductor Industry Fund's layout in the field of vision. We hope that in the future, Chuangshi Semiconductor will work closely with other projects in our system to jointly develop first-class products and forward-looking innovative technologies in the industry, and provide better product solutions for more application scenarios.

Shanghai Anchuang Chuangxin Enterprise Management Consulting Partnership stated: As a corporate consulting and investment institution focusing on the high-tech field, we are very optimistic about the image sensor chip R&D team of AVC Semiconductor and its outstanding product innovation capabilities. This investment not only provides financial support for AVC Semiconductor, but also uses our ecosystem resources and industry-leading technologies to provide AVC Semiconductor with in-depth industrial links through innovation empowerment, helping to achieve longer-term development goals. We are full of confidence in participating in this investment in AVC Semiconductor, and look forward to helping AVC Semiconductor achieve greater success in technological innovation, market expansion and brand building, and work with AVC Semiconductor to create a new chapter in the image sensor industry.

The founder of AVC Semiconductor said: "I am very honored to receive joint investment from Hanlian Semiconductor Industry Fund, the Education Foundation of my alma mater Zhejiang University, and Shanghai Anchuang Chuangxin Enterprise Management Consulting Partnership. This is not only a recognition of AVC Semiconductor's past achievements, but will also help the company further promote technological innovation, enhance market competitiveness, and inject vitality into the company's long-term development. Since its establishment, AVC Semiconductor has been focusing on the research and development and innovation of CMOS image sensor chips. Its products and services are widely used in many fields such as automotive vision, smart security, low-power IoT, machine vision, and medical vision, constantly promoting technological progress and meeting market demand. We also look forward to working with more partners to jointly promote the innovative development of the image sensor industry."

Transvision Semiconductor will continue to take technological innovation as the core driving force, uphold the core concept of "gratitude, pragmatism and courage to innovate", actively seize market opportunities, continuously expand market share, strengthen industrial chain collaboration, and practice sustainable development, aiming to become a global leading CIS solution provider and provide customers with better quality and more efficient services and products.

Galaxycore chip-on-module packaging for CIS

Link: https://en.gcoreinc.com/news/detail-69

 

The performance of an image sensor relies not only on its design and manufacturing but also on the packaging technology.

CIS packaging is particularly challenging, as any particle in the environment that drops on the sensor surface during the process can cause a significant affect on the final image quality. GalaxyCore’s COM (Chip on Module) packaging technology has revolutionized traditional CSP (Chip Scale Package) and COB (Chip on Board) methods, enhancing the performance, reliability, and applicability of the optical system of camera modules.

Birth of the COM Packaging

Before the advent of COM packaging, CSP and COB were the predominant packaging choices for CIS. CSP places a layer of glass on the sensor to prevent dust. However, the glass also reflects some light, thus degrading image quality. COB requires an exceptionally demanding environment, typically a Class 100 clean room.

Is there an alternative? GalaxyCore’s technical team developed an innovative solution by directly suspending gold wire to serve as pins. In the fantastic microscopic realm, the short gold wire becomes hard and elastic, which can used directly as pins.

At GalaxyCore’s Class 100 clean rooms in the packaging and testing factory in Jiashan City, Zhejiang Province, a fully-automated high-precision equipment bonds the gold wire to the image sensor with exacting accuracy. The sensor is then mounted on a filter base, and the other end of the gold wire is suspended as the pin. The pin is subsequently soldered by the camera module manufacturer to the FPCB. When assembled with a lens and the actuator, a complete camera module can be formed.

We were pleasantly surprised to discover that the performance and reliability of the COM packaging are on par with, or even exceed, those of high-end COB packaging.

Three Advantages for System-level Improvement

1. Enhanced Optical System Performance
The COM packaging notably enhances the optical system performance of camera modules. In the COB packaging, the chip is directly mounted on the FPCB. However, the FPCB is prone to deformation during production, which may lead to the tilt of the optical axis and further affect the image quality.
In GalaxyCore’s COM packaging, both the chip and lens use the filter base as the benchmark, thus mitigating the optical axis tilt caused by FPCB deformation. This significantly improves the edge resolution of images, especially in large aperture and high-pixel camera modules.

2. Improved Module Reliability and Flexibility
In the COM packaging, due to a certain distance between the chip and the FPCB, the camera module is subject to greater back pressure, thus improving the reliability and durability of the module.
In the COB packaging, the CIS directly mounted on the FPCB is more sensitive to the back pressure, and the SFR (i.e. image resolution) is more likely to be affected. By contrast, in the COM packaging, the CIS chip is relatively isolated and suspended, making it hard for the back pressure to directly act on the CIS chip. As such, a better image resolution can be achieved. Different from the COB packaging, the COM packaging connects the chip pins and pads through soldering. This solution reduces the material requirements for the FPCB and further enhances its adaptability and flexibility.

3. Minimized Module
In the COM packaging, FPCB can be hollowed out to allow the chip to sink into it. Compared to the COB packaging with direct mounting of chip on the FPCB or reinforcement of steel sheets, the COM solution can control the back pressure more effectively and reduce the requirements for steel sheet thickness. This enhances the height advantage of the overall packaging module, to meet cell phones’ stringent requirements for space. This advantage is more notable in devices seeking thin and light designs.

GalaxyCore’s COM packaging ensures both high performance and reliability for the optical system while simplifying the subsequent production processes for module manufacturers. This method reduces the dependence on dust-free environments and enhances quality, yield, and efficiency. With the mass production of COM chips and further application of this technology, it will deliver improved imaging performance across a broader range of end products.

EI2025 late submissions deadline tomorrow Oct 15, 2024

Electronic Imaging 2025 is accepting submissions --- late submission deadline is tomorrow (Oct 15, 2024). The Electronic Imaging Symposium comprises 17 technical conferences to be held in person at the Hyatt Regency San Francisco Airport in Burlingame, California.

https://www.imaging.org/IST/Conferences/EI/EI2025/AuthorSubmit.aspx

IMPORTANT DATES

Journal-first (JIST/JPI) Submissions Due 15 Aug

Final Journal-first manuscripts due 31 Oct

Late Submission Deadline 15 Oct

FastTrack Proceedings Manuscripts Due 8 Jan 2025

All Outstanding Manuscripts Due 21 Feb 2025

Registration Opens mid-Oct

Demonstration Applications Due 21 Dec

Early Registration Ends 18 Dec

Hotel Reservation Deadline 10 Jan

Symposium Begins 2 Feb

Non-FastTrack Proceedings Manuscripts Due

21 Feb

There are three submission options to fit your publication needs: journal, conference, and abstract-only.

Lynred acquires NIT

Press release: https://ala.associates/corporate/lynred-acquires-new-imaging-technologies-to-consolidate-leadership-in-infrared-sensors/

Acquisition of Paris-based SWIR imaging provider expands Lynred’s product portfolio to include coveted large format shortwave sensors with small pixel pitch

Grenoble, France, October 7, 2024 – Lynred, a leading global provider of high-quality infrared sensors for the aerospace, defense and commercial markets, today announces its acquisition of New Imaging Technologies, a Paris-based shortwave infrared (SWIR) imaging modules and sensors provider. In a strategic move to consolidate its leadership in infrared sensors, Lynred’s product portfolio will expand to include high-definition large array SWIR sensors in small pixel pitch, bolstering its product offering across all wavelength bands (short to very longwave). The transaction is expected to close in Q4, 2024 and is subject to customary conditions.

The deal includes New Imaging Technologies’ large and innovative portfolio of SWIR products (imaging sensors and modules) and a portfolio of wide dynamic range patents. This enables Lynred to offer global customers large format SWIR sensors with advanced capabilities for applications in markets where AI, deep learning and multispectral imaging are driving growth.
New Imaging Technologies (NIT) is the only European firm to manufacture and market a SWIR HD1080p array and associated module at a pixel size of 8µm, a key asset for several applications that Lynred will now leverage.

“Lynred’s acquisition of NIT is a growth accelerator. We will shorten time to market and leverage synergies in offering state-of-the-art SWIR products. The global market for SWIR infrared imaging for machine vision is growing fast, as well as for defense applications, such as laser detection and in new space,” said Hervé Bouaziz, executive president at Lynred. “NIT brings to Lynred the agility of a small, innovative organization, with an extensive product offering able to cater to our large customer base. As we share complementary industrial supply chains and technical skills, we can deliver highly competitive SWIR imaging sensors and modules to customers.” 

This strategic acquisition is yet another significant investment Lynred is making in order to strengthen its leadership in infrared, a critical technology for a growing range of commercial applications and sovereign activities. In parallel, Lynred is investing significantly in its ongoing Campus project. Campus includes the construction of state-of-the-art clean rooms that will double Lynred’s current capacity.

Lynred and NIT will attend Vision Stuttgart in Germany (October 8-10), booth #8C46, and AUSA (October 14-16), in Washington DC, booth #8015, showcasing products based on the companies’ latest technological achievements. These two important trade shows will give them the opportunity to share further information and answer any questions about the acquisition.

Another PhD Defense Talk on Event Cameras

Thesis title: A Scientific Event Camera: Theory, Design, and Measurements
Author: Rui Garcia
Advisor: Tobi Delbrück

 See also, earlier post about the PhD thesis abstract and full text link: https://image-sensors-world.blogspot.com/2024/08/phd-thesis-on-scidvs-event-camera.html

The full thesis text is available here after the embargo ends in July 2026: https://www.research-collection.ethz.ch/handle/20.500.11850/683623

Artilux paper on room temperature quantum computing using Ge-Si SPADs

Neil Na et al from Artilux and UMass Boston have published a paper titled "Room-temperature photonic quantum computing in integrated silicon photonics with germanium–silicon single-photon avalanche diodes" in APL Quantum.

Abstract: Most, if not all, photonic quantum computing (PQC) relies upon superconducting nanowire single-photon detectors (SNSPDs) typically based on niobium nitride (NbN) operated at a temperature <4 K. This paper proposes and analyzes 300 K waveguide-integrated germanium–silicon (GeSi) single-photon avalanche diodes (SPADs) based on the recently demonstrated normal-incidence GeSi SPADs operated at room temperature, and shows that their performance is competitive against that of NbN SNSPDs in a series of metrics for PQC with a reasonable time-gating window. These GeSi SPADs become photon-number-resolving avalanche diodes (PNRADs) by deploying a spatially-multiplexed M-fold-waveguide array of M GeSi SPADs. Using on-chip waveguided spontaneous four-wave mixing sources and waveguided field-programmable interferometer mesh circuits, together with the high-metric SPADs and PNRADs, high-performance quantum computing at room temperature is predicted for this PQC architecture.

Link: https://doi.org/10.1063/5.0219035

Schematic plot of the proposed room-temperature PQC paradigm with integrated SiPh using the path degree of freedom of single photons: single photons are generated through SFWM (green pulses converted to blue and red pulses) in SOI rings (orange circles), followed by active temporal multiplexers (orange boxes that block the blue pulses), and active spatial multiplexers (orange boxes that convert serial pulses to parallel pulses) (quantum sources), manipulated by a FPIM using cascaded MZIs (quantum circuits), and measured by the proposed waveguide GeSi SPADs as SPDs and/or NPDs (quantum detectors). An application-specific integrated circuit (ASIC) layer is assumed to be flipped and bonded on the PIC layer with copper (Cu)–Cu pillars (yellow lines) connected wafer-level hybrid bond, or with metal bumps (yellow lines) connected chip-on-wafer-on-substrate (CoWoS) packaging. The off-chip fiber couplings are either for the pump lasers or the optical delay lines.

 

 (a) Top view of the proposed waveguide GeSi SPAD, in which the materials assumed are listed. (b) Cross-sectional view of the proposed waveguide GeSi SPAD, in which the variables for optimizing QE are illustrated.

 

 

(a) QE of the proposed waveguide GeSi SPAD without the Al back mirror, simulated at 1550 nm as a function of coupler length and Ge length. (b) QE of the proposed waveguide GeSi SPAD with the Al back mirror, simulated at 1550 nm as a function of gap length and Ge length. (c) QE of the proposed waveguide GeSi SPAD with the Al back mirror, simulated as a function of wavelength centered at 1550 ± 50 nm (around the C band) and 1310 ± 50 nm (around the O band), given the optimal conditions, that is, coupler length equal to 1.4 μm, gap length equal to 0.36 μm, and Ge length equal to 14.2 μm. While the above data are obtained by 2D FDTD simulations, we also verify that for Ge width >1 μm and mesa design rule <200 nm, there is little difference between the data obtained by 2D and 3D FDTD simulations.

Dark current of GeSi PD at −1 V reverse bias, normalized by its active region circumference, plotted as a function of active region diameter. The experimental data (blue dots) consist of the average dark current between two device repeats (the ratio of the standard deviation to the average is <2%) for five different active region diameters. The linear fitting (red line) shows the bulk dark current density and the surface dark current density with its slope and intercept, respectively.

For the scheme of photon-based PQC: (a) The probability of successfully detecting N photon state and (b) the fidelity of detecting N photon state, using M spatially-multiplexed waveguide GeSi SPADs at 300 K as an NPD. (c) The difference in the probabilities of successfully detecting N photon state, and (b) the difference in the fidelities of detecting N photon state, using M spatially-multiplied waveguide GeSi SPADs at 300 K and NbN SNSPDs at 4 K as NPDs. Note that no approximation is used in the formula for plotting these figures.

For the scheme of qubit-based PQC: (a) The probability of successfully detecting N qubit state, and the fidelity of detecting N qubit state, using single waveguide GeSi SPADs at 300 K as SPDs. (b) The difference in the probabilities of successfully detecting N qubit state, and the difference in the fidelities of detecting N qubit state, using single waveguide GeSi SPADs at 300 K and NbN SNSPDs at 4 K as SPDs. Note that no approximation is used in the formula for plotting these figures.

Conference List - December 2024

RSNA 2024  - 1-5 December 2024 - Chicago, Illinois, USA - Website

21st Annual IEEE International Conference on Sensing, Communication, and Networking - 2-4 Dec 2024 - Phoenix, Arizona, USA - Website

Asia-Pacific Remote Sensing - 2-5 December 2024 - Kaohsiung, Taiwan - Website

International Technical Exhibition on Image Technology and Equipment (ITE) - 4-6 Dec 2024 - Yokohama, Japan - Website

IEEE International Electron Devices Meeting - 7-11 Dec 2024 - San Francisco, CA, USA - Website

17th International Conference on Sensing Technology (ICST2024) - 9-11 Dec 2024 - Sydney, Australia - Website

If you know about additional local conferences, please add them as comments.

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Image sensors review paper

Eric Fossum, Nobukazu Teranishi, and Albert Theuwissen have published a review paper titled "Digital Image Sensor Evolution and New Frontiers" in the Annual Review of Vision Science.

Link: https://doi.org/10.1146/annurev-vision-101322-105538

Abstract:

This article reviews nearly 60 years of solid-state image sensor evolution and identifies potential new frontiers in the field. From early work in the 1960s, through the development of charge-coupled device image sensors, to the complementary metal oxide semiconductor image sensors now ubiquitous in our lives, we discuss highlights in the evolutionary chain. New frontiers, such as 3D stacked technology, photon-counting technology, and others, are briefly discussed.

Figure 1  Illustration of a four-phase charge-coupled device diagram, a potential well diagram, and clock charts. As four clocks switch sequentially, the potential wells move rightward together with the charge packets.

Figure 2  Illustration of a (three-phase) interline-transfer (ILT) charge-coupled device (CCD) showing (left) a unit cell with a photodiode (PD) and vertical CCD and (right) the entire ILT CCD image sensor. The photosignal moves from the PD into the vertical CCD, and then into the horizontal CCD to the sense node and output amplifier.

Figure 3  A pinned PD in an interline-transfer CCD with one phase of the CCD shift register (VCCD) shown. (a) A physical cross-section and (b) a potential diagram showing the electrons transferring from the PD to the VCCD. Abbreviations: CCD, charge-coupled device; CS, channel stop; PD, photodiode; TG, transfer gate; VCCD, vertical CCD.

Figure 4  Microlenses to concentrate light on the photoactive area of a pixel. (a) Top view. (b) Cross-sections for different thermal-flow times. Images courtesy of NEC Corp.

Figure 5  A 16-Mpixel stitched complementary metal oxide semiconductor image sensor on a 6-inch-diameter wafer. Figure reproduced from Ay & Fossum (2006).

Figure 6  (a) Complementary metal oxide semiconductor (CMOS) image sensor block diagram. (b) Photograph of early Photobit CMOS image sensor chip for webcams. (Left) Digital logic for control and input-output (I/O) functions. (Top right) The pixel array. (Bottom right) The column-parallel analog signal processing and analog-to-digital converter (ADC) circuits. Photo courtesy of E.R.F.

Figure 7  An illustrative PPD 4-T active pixel with intrapixel charge transfer. (a) A circuit schematic (Fossum & Hondongwa 2014). (b) A band diagram looking vertically through the PPD showing the photon, electron–hole pair, and SW. (c) A physical cross-section showing doping levels (Fossum 2023). Abbreviations: COL BUS, column bus line; FD, floating diffusion; PPD, pinned photodiode; RST, reset gate; SEL, select gate; SF, source-follower; SW, storage well; TG, transfer gate.

Figure 8  Illustrative example of (a) a frontside-illuminated pixel and (b) a backside-illuminated (BSI) pixel showing the better light gathering capability of the BSI pixel.

Figure 9  Illustrative cross-sectional comparison of (a) a backside-illuminated device and (b) 3D stacked image sensors where the lower layer is used for additional circuitry.

Figure 10  Quanta image sensor concept showing the spatial distribution of jot outputs (left), an expanded view of jot output bit planes at different time slices (center), and gray-scale image pixels formed from spatiotemporal neighborhoods of jots (right). Figure adapted from Ma et al. (2022a).

Hamamatsu completes acquisition of NKT Photonics

Press release: https://www.hamamatsu.com/us/en/news/featured-products_and_technologies/2024/20240531000000.html

Acquisition completion of NKT Photonics. Accelerating growth in the semiconductor, quantum, and medical fields through laser business enhancement.

Hamamatsu Photonics K.K. (hereinafter referred to as “Hamamatsu Photonics”) is pleased to announce the completion of the previously published acquisition of NKT Photonics A/S (hereinafter referred to as “NKT Photonics”).
 
NKT Photonics is the leading supplier of high-performance fiber lasers and photonic crystal fibers. Based on their unique fiber technology, the laser products fall within three major product lines:

1.  Supercontinuum White Light Lasers (SuperK): The SuperK lasers deliver high brightness in a broad spectral range (400 nm-2500 nm), and are used within bio-imaging, semiconductor metrology, and device-characterization.
2.  Single-Frequency DFB Fiber Lasers (Koheras): The Koheras lasers have extremely high wavelength stability and low noise, and are ideal for fiber sensing, quantum computing, and quantum sensing.
3.  Ultra-short pulse Lasers (aeroPULSE and Origami): This range of lasers consists of picosecond and femtosecond pulsed lasers with excellent beam quality and stability. The lasers are mainly used within ophthalmic surgery, bio-imaging, and optical processing applications.

 
The acquisition enables us to combine Hamamatsu Photonics’ detectors and cameras with NKT Photonics' lasers and fibers, thereby offering unique system solutions to the customers.
 
One special market of interest is the rapidly growing quantum computing area. Here NKT Photonics’ Koheras lasers serve customers with trapped ions systems requiring high power narrow linewidth lasers with extremely high wavelength stability and low noise. The same customers use Hamamatsu Photonics’ high-sensitivity cameras and sensors to detect the quantum state of the qubits. Together, we will be able to provide comprehensive solutions including lasers, detectors, and optical devices for the quantum-technology market.
 
Another important area of collaboration is the semiconductor market. With the trend toward more complex three-dimensional semiconductor devices, there is an increasing demand for high precision measurement equipment covering a wide range of wavelengths. By combining NKT Photonics' broadband SuperK lasers with Hamamatsu Photonics’ optical sensors and measuring devices, we can supply expanded solutions for semiconductor customers needing broader wavelength coverage, multiple measurement channels, and higher sensitivity.
 
Finally, in the hyperspectral imaging market, high-brightness light sources with a broad spectral range from visible to near-infrared (400 nm-2500 nm) are essential. Additionally, unlike halogen lamps, since no heat generation occur, the demand for NKT Photonics' SuperK is increasing. We can provide optimal solutions by integrating it with Hamamatsu Photonics’s image sensors and cameras, leveraging the unique compound semiconductor technologies.
 
With this acquisition, Hamamatsu Photonics Group now possesses a very broad range of technologies within light sources, lasers, and detectors. The combination of NKT Photonics and Hamamatsu Photonics will help us to drive our technology to the next level. NKT Photonics will continue their operating structure and focus on providing superior products and solutions to their customers.