Thursday, June 30, 2016

Pinned Photodiode Fundamentals

Delft University publishes a very nice PhD Thesis "Fundamental Characteristics of a Pinned Photodiode CMOS Pixel" by Yang Xu. Other than a lot of basic stuff on PPD principles and characterization, the thesis discusses some of the more advanced things, like optimizations for image lag and charge transfer speed:

4 comments:

  1. Great work and thanks for sharing!

    ReplyDelete
  2. T-shaped tranfer gate is a kind of traditional transfer gate.
    Toshiba CIS team developed this T shaped transfer gate more than 15 years ago.
    The T shaped gate accomplished world 1st perfect transfer pinned photodiode.
    A revese work paer showed the Toshiba T shaped transfer gate in IISW 2007.
    The T shaped gate CIS were used in many Nokia (Microsoft) handy phones.
    I think that many European CIS engineers knew this story.

    Old Toshiba engineer

    ReplyDelete
  3. T-shaped tranfer gate is a kind of traditional transfer gate.
    Toshiba CIS team developed this T shaped transfer gate more than 15 years ago.
    The T shaped gate accomplished world 1st perfect transfer pinned photodiode.
    A revese work paer showed the Toshiba T shaped transfer gate in IISW 2007.
    The T shaped gate CIS were used in many Nokia (Microsoft) handy phone.
    I think that many European CIS engineers knew this story.

    Old Toshiba engineer

    ReplyDelete
  4. Albert TheuwissenJuly 5, 2016 at 5:58 PM

    Well to be honest with you, the T-shape transfer gate is something that I learned from my new colleagues in 1983 at the time I joined Philips. They used these T-gates to enhance the charge transfer in CCDs. So it is really much older than you think .... History is repeating itself ....

    ReplyDelete

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