A group of researches from China Hangzhou Dianzi University publishes their theoretical RTN noise model in the paper "Modeling random telegraph signal noise in CMOS image sensor under low light based on binomial distribution" by Yu Zhang, Xinmiao Lu, Guangyi Wang, Yongcai Hu, and Jiangtao Xu in Chinese Physics B Journal Vol. 25, No. 7 (2016). The paper describes a theoretical model and announces the plans to verify some of its predictions in a future experiment:
"the long channel device has the longer tail in the RTS noise histogram when the density of the oxide trap is high, while the short channel device has the longer tail in the RTS noise histogram in the case of low oxide trap density. The simulation results also illustrate that the longer tail in the RTS noise histogram will appear at the high environmental temperature if the device dimension and the density of the oxide trap are fixed."