New Electronics: CMOSIS has demonstrated a 1MP image sensor featuring dual gain readout to reach DR of more than 89.5dB. The DR is increased by two approaches. First, the dark noise is said to be reduced. Second, the integration of the image charge is said to take place simultaneously at low and high amplification settings. This dual gain readout results in two different images which are read out sequentially and combined externally into one final image. The sensor has twice the number of column amplifiers than columns and the gain of each amplifier is programmable up to 16.
This approach is to be used in a number of future products with different pixel size, frame rate, etc.
Update: Electronics Weekly too published an article about the new CMOSIS 1MP imager dubbed CLN1000 and featuring 10um pixels. The sensor consumes 300 to 350mW, and is housed in a JLCC-84 package. The article also states low dark noise of less than 3.4e- at a full well capacity of 100 ke-. EETimes quotes the same numbers too.
Update #2: Photonics Online published an article about the CMOSIS prototype too.
Update #3: Here is the original CMOSIS PR.