Wednesday, November 01, 2023

Image Sensing Topics at Upcoming IEDM 2023 Dec 9-13 in San Francisco

The 69th annual IEEE International Electron Devices Meeting (IEDM) will be held in San Francisco Dec. 9-13. This year there are three sessions dealing with advanced image sensing topics. You can find summaries of all of these papers by going here ( and then clicking on the relevant sessions and papers within each one:
Session #8 on Monday, Dec. 11 is “Advanced Photonics for Image Sensors and High-Speed Communications.” It features six papers describing advanced photonics for image sensors and high speed communications. The first three deal with device and integration concepts for sub-diffraction color filters targeting imaging key performance indicators, while the second three deal with devices and technologies for high speed communication systems.

  1.  IMEC will describe a novel sub-micron integration approach to color-splitting, to match human eye color sensitivity.
  2.  VisEra Technologies will describe the use of nano-light pillars to improve the quantum efficiency and signal-to-noise ratio (SNR) of color filters on CMOS imaging arrays under low-light conditions.
  3.  Samsung will detail a metasurface nano-prism structure for wide field-of-view lenses, demonstrating 25% higher sensitivity and 1.2 dB increased SNR vs. conventional micro-lenses.
  4.  National University of Singapore will describe the integration of ferroelectric material into a LiNbO3-on-insulator photonic platform, demonstrating non-volatile memory and high-efficiency modulators with an efficiency of 66 pm/V.
  5.  IHP will discuss the first germanium electro-optical modulator operating at 100 GHz in a SiGe BiCMOS photonics technology.
  6.  An invited paper from Intel will discuss the first 256 Gbps WDM transceiver with eight 200 GHz-spaced wavelengths simultaneously modulated at 32 Gbps, and with a bit-error-rate less than 1e-12.

Session #20 on Tuesday, Dec. 12 is Emerging Photodetectors. It features five papers describing recent developments in emerging photodetectors spanning the MIR to the DUV spectral range, and from group IV and III-V sensors to organic detectors.

  1.  The first paper by KAIST presents a fully CMOS-compatible Ge-on-Insulator platform for detection of wavelengths beyond 4 µm.
  2.  The second paper by KIST (not a typo) presents a new record-low-jitter SPAD device integrated into a CIS process technology, covering a spectral range of visible up to NIR.
  3.  The third paper by KAIST describes a wavelength-tunable detection device combining optical gratings and phase-change materials, reaching wavelengths up to 1700 nm.
  4.  The University of Science and Technology of China will report on a dual-function tunable emitter and NIR photodetector combination based on III-V GaN/AlGaN nanowires on silicon.
  5.  An invited paper from France’s CNRS gives an overview on next-generation sustainable organic photodetectors and emitters.

Session #40 on Wednesday, Dec. 13 features six papers describing the most recent advances in image sensors.

  1.  Samsung will describe a 0.5 µm pixel, 3 layers-stacked, CMOS image sensor (CIS) with in-pixel Cu-Cu bonding technology featuring improved conversion gain and noise.
  2.  Omnivision will present a 2.2 µm-2 layer stacked high dynamic range VDGS CIS with 1x2 shared structure offering dual conversion gain and achieving low FPN.
  3.  STMicroelectronics will describe a 2.16 µm 6T BSI VDGS CIS using deep trench capacitors and achieving 90 dB dynamic range using spatially-split exposure.
  4.  Meta will describe a 2 megapixel - 4.23 µm pixel pitch - offering block-parallel A/D architecture and featuring programmable sparse-capture with a fine grain gating scheme for power saving.
  5.  Canon will introduce a new twisted photodiode CIS structure - 6 µm pixel pitch - enabling all-directional autofocus for high speed and accuracy and 95 dB DR.
  6.  Shanghai Jiao Tong University will present a 64x64-pixel organic imager prototype, based on a novel hole transporting layer (HTL)-free structure achieving the highest recorded low-light performance.

Full press release about the conference is below.

2023 IEEE International Electron Devices Meeting to Highlight Advances in Critical Semiconductor Technologies with the Theme, “Devices for a Smart World Built Upon 60 Years of CMOS”

Four Focus Sessions on topics of intense research interest:

  •  3D Stacking for Next-Generation Logic & Memory by Wafer Bonding and Related Technologies
  •  Logic, Package and System Technologies for Future Generative AI
  •  Neuromorphic Computing for Smart Sensors
  •  Sustainability in Semiconductor Device Technology and Manufacturing

SAN FRANCISCO, CA – Since it began in 1955, the IEEE International Electron Devices Meeting (IEDM) has been where the world’s best and brightest electronics technologists go to learn about the latest breakthroughs in semiconductor and related technologies. That tradition continues this year, when the 69th annual IEEE IEDM conference takes place in-person December 9-13, 2023 at the Hilton San Francisco Union Square hotel, with online access to recorded content available afterward.
The 2023 IEDM technical program, supporting the theme, “Devices for a Smart World Built Upon 60 Years of CMOS,” will consist of more than 225 presentations plus a full slate of panels, Focus Sessions, Tutorials, Short Courses, a career luncheon, supplier exhibit and IEEE/EDS award presentations.
“The IEDM offers valuable insights into where the industry is headed, because the leading-edge work presented at the conference showcases major trends and paradigm shifts in key semiconductor technologies,” said Jungwoo Joh, IEDM 2023 Publicity Chair and Process Development Manager at Texas Instruments. “For example, this year many papers discuss ways to stack devices in 3D configurations. This is of course not new, but two things are especially noteworthy about this work. One is that it isn’t just happening with conventional logic and memory devices, but with sensors, power, neuromorphic and other devices as well. Also, many papers don’t describe futuristic laboratory studies, but rather specific hardware demonstrations that have generated solid results, opening pathways to commercial feasibility.”
“Finding the right materials and device configurations to develop transistors that will perform well with acceptable levels of reliability remains a key challenge,” said Kang-ill Seo, IEDM 2023 Publicity Vice Chair and Vice President, Semiconductor R&D, Samsung Semiconductor. “This year’s program shows that electrothermal considerations remain a key focus, particularly with attempts to add functionality to a chip’s interconnect, or wiring, which is fabricated using low-temperature processes.”
Here are details of the 2023 IEEE International Electron Devices Meeting:
Tutorial Sessions – Saturday, Dec. 9
The Saturday tutorial sessions on emerging technologies are presented by experts in the field to bridge the gap between textbook-level knowledge and leading-edge current research, and to introduce attendees to new fields of interest. There are three time slots, each with two tutorials running in parallel:
1:30 p.m. - 2:50 p.m.
• Innovative Technology for Beyond 2 nm, Matthew Metz, Intel
• CMOS+X: Functional Augmentation of CMOS for Next-Generation Electronics, Sayeef Salahuddin, UC-Berkeley
3:05 p.m. - 4:25 p.m.
• Reliability Challenges of Emerging FET Devices, Jacopo Franco, Imec
• Advanced Packaging and Heterogeneous Integration - Past, Present & Future, Madhavan Swaminathan, Penn State
4:40 p.m. - 6:00 p.m.
• Synapses, Circuits, and Architectures for Analog In-Memory Computing-Based Deep Neural Network Inference Hardware Acceleration, Irem Boybat, IBM
• Tools for Device Modeling: From SPICE to Scientific Machine Learning, Keno Fischer, JuliaHub
Short Courses – Sunday, Dec. 10
In contrast to the Tutorials, the full-day Short Courses are focused on a single technical topic. They offer the opportunity to learn about important areas and developments, and to network with global experts.

• Transistor, Interconnect, and Chiplets for Next-Generation Low-Power & High-Performance Computing, organized by Yuri Y. Masuoka, Samsung

  •  Advanced Technology Requirement for Edge Computing, Jie Deng, Qualcomm
  •  Process Technology toward 1nm and Beyond, Tomonari Yamamoto, Tokyo Electron
  •  Empowering Platform Technology with Future Semiconductor Device Innovation, Jaehun Jeong, Samsung
  •  Future Power Delivery Process Architectures and Their Capability and Impact on Interconnect Scaling, Kevin Fischer, Intel
  •  DTCO/STCO in the Era of Vertical Integration, YK Chong, ARM
  •  Low Power SOC Design Trends/3D Integration/Packaging for Mobile Applications, Milind Shah, Google

• The Future of Memory Technologies for High-Performance Memory and Computing, organized by Ki Il Moon, SK Hynix

  •  High-Density and High-Performance Technologies for Future Memory, Koji Sakui, Unisantis Electronics Singapore/Tokyo Institute of Technology
  •  Advanced Packaging Solutions for High Performance Memory and Compute, Jaesik Lee, SK Hynix
  •  Analog In-Memory Computing for Deep Learning Inference, Abu Sebastian, IBM
  •  The Next Generation of AI Architectures: The Role of Advanced Packaging Technologies in Enabling Heterogeneous Chiplets, Raja Swaminathan, AMD
  •  Key Challenges and Directional Path of Memory Technology for AI and High-Performance Computing, Keith Kim, NVIDIA
  •  Charge-Trapping Memories: From the Fundamental Device Physics to 3D Memory Architectures (3D NAND, 3D NOR, 3D DRAM) and Computing in Memory (CIM), Hang-Ting (Oliver) Lue, Macronix

Plenary Presentations – Monday, Dec. 11

  •  Redefining Innovation: A Journey forward in the New Dimension Era, Siyoung Choi, President & GM, Samsung Foundry Business, Device Solutions Division
  •  The Next Big Thing: Making Memory Magic and the Economics Beyond Moore's Law, Thy Tran, Vice President of Global Frontend Procurement, Micron
  •  Semiconductor Challenges in the 5G and 6G Technology Platforms, Björn Ekelund, Corporate Research Director, Ericsson

Evening Panel Session – Tuesday evening, Dec. 12
The IEDM evening panel session is an interactive forum where experts give their views on important industry topics, and audience participation is encouraged to foster an open exchange of ideas. This year’s panel will be moderated by Dan Hutcheson, Vice Chair at Tech Insights.

  •  AI: Semiconductor Catalyst? Or Disrupter? Artificial Intelligence (AI) has long been a hot topic. In 2023 it became super-heated when large language models became readily available to the public. This year’s IEDM will not rehash what’s been dragged through media. Instead, it will bring together industry experts to have a conversation about how AI is changing the semiconductor industry and to ask them how they are using AI to transform their efforts. The topics will be wide-ranging, from how AI will drive demand for semiconductors, to how it’s changing design and manufacturing, and even to how it will change the jobs and careers of those working in it.

Luncheon – Tuesday, Dec. 12
There will be a career-focused luncheon featuring industry and scientific leaders talking about their personal experiences in the context of career growth. The discussion will be moderated by Jennifer Zhao, President/CEO, asm OSRAM USA Inc. The speakers will be:

  •  Ilesanmi Adesida, University Provost and Acting President, Nazarbayev University, Kazakhstan -- Professor Ilesanmi Adesida is a scientist/engineer and an experienced administrator in both scientific and educational circles, with more than 350 peer-reviewed articles/250 presentations at international conferences.
  •  Isabelle Ferain, Vice-President of Technology Development, GlobalFoundries -- Dr. Ferain oversees GF’s technology development mission in its 300mm fabs in the US and Europe.

Vendor Exhibition/MRAM Poster Session/MRAM Global Innovation Forum

  •  A vendor exhibition will be held once again.
  •  A special poster session dedicated to MRAM (magnetoresistive RAM memory) will take place during the IEDM on Tuesday, Dec. 12 from 2:20 pm to 5:30 p.m., sponsored by the IEEE Magnetics Society.
  •  Also sponsored by the IEEE Magnetics Society, the 15th MRAM Global Innovation Forum will be held in the same venue after the IEDM conference concludes, on Thursday, Dec. 14.

For registration and other information, visit
Follow IEDM via social media

About IEEE & EDS
IEEE is the world’s largest technical professional organization dedicated to advancing technology for the benefit of humanity. Through its highly cited publications, conferences, technology standards, and professional and educational activities, IEEE is the trusted voice on a wide variety of areas ranging from aerospace systems, computers, and telecommunications to biomedical engineering, electric power, and consumer electronics. The IEEE Electron Devices Society is dedicated to promoting excellence in the field of electron devices, and sponsors the IEEE IEDM.

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