Omnivision Automotive Image Sensor Demo

LowLightVideos publishes a video demo of Omnivision OV10640 OmniBSI 4.2um pixel sensor for automotive applications. The notable points in the video:

• 0:10 Driving down the road there are clouds in the night sky that can be seen, yet oncoming headlights are not blinding.
• 0:18 Driving in the underground during the day provides a fairly good image, though the trees outdoors are a bit washed out.
• 0:55 Driving into the Sun does not oversaturate the Sensor. Next, a turn into a dark underground which quickly and smoothly brightens up as we enter.
• 1:40 All those Headlights create a tiny bit of glare, but the clouds look pretty good in the night sky. Very little noise visible.
• 4:00 At night the Streetlights never get too bright and the glare is never too great, yet the sky has visible clouds and very little noise.

Imec Presents UV Anti-Reflective Coating

Imec presents a BSI CMOS sensor featuring a new anti-reflective coating (ARC) optimized for UV light. Targeting imaging solutions in new markets such as life sciences, the achievement is an important addition to imec’s customized 200mm CMOS fab. This 200mm process line enables imec to offer design, prototyping and low volume manufacturing of custom specialty chip solutions such as highly specialized CMOS image sensors.

Imec has already developed an ARC for visible light range (400nm-800nm) with >70% QE over the entire spectral range. Imec’s new ARC, targeting the UV range, shows excellent performance at near UV wavelengths, with QE above 50% over the entire spectral range from 260nm to 400nm wavelength.

“This is an important milestone for imec’s customized 200mm CMOS process line, demonstrating our expertise and capability to design, prototype and manufacture high-end CMOS image sensors,” said Rudi Cartuyvels, SVP, Smart Systems & Energy Technologies at imec. “The development widens our portfolio towards new markets, offering solutions for both visible and UV imaging in semiconductor equipment applications, such as advance lithography and wafer and mask inspection.”

ON Semi Presents EMCCD with Per-Pixel Switchable Gain, More

Business Wire: ON Semiconductor's 2.1MP/30fps KAE-02150 CCD uses an innovative HDR output circuit allowing either CCD (low-gain) or EMCCD (high-gain) outputs to be utilized on a pixel-by-pixel basis within the same image. Charge from each individual pixel is measured and the signal level is compared to a user selectable threshold in the camera system to determine where each charge packet is routed. Pixels from very low-light regions of the scene can be selectively routed to the EMCCD output, while pixels from bright regions of the image – which would typically saturate an EMCCD register and distort the image – are routed to the conventional CCD output amplifier. With this intra-scene switchable gain feature, signals from both outputs can then be re-combined, allowing one camera to properly render bright regions in a dark field of view and enabling dynamic compensation under changing conditions such as headlights entering or leaving an extreme low light scene.

“As the first device to leverage our new Interline Transfer EMCCD technology, the KAE-02150 Image Sensor delivers a revolutionary solution to the industry,” said Chris McNiffe, VP of image sensor products at ON Semiconductor. “By extending the superb image quality and uniformity of CCD devices into the extreme low-light regime, customers in industrial markets now have access to a new level of performance under the most challenging imaging conditions. This is a clear demonstration of ON Semiconductor’s unique ability to bring the most advanced imaging solutions to our customers by leveraging its expansive base of imaging technologies.”

The KAE-02150 CCD is sampling now, and will be available in Monochrome and Bayer Color configurations. An evaluation kit including hardware and software will also be available by the end of 2014, allowing the performance of this new device to be characterized by customers for their specific applications.

Business Wire: ON Semi also introduce two new global shutter CMOS sensors in its PYTHON family. The new PYTHON 2000 and PYTHON 5000, with resolutions of 2.3MP and 5.3MP respectively, aim to general purpose industrial image sensing such as machine vision, inspection and motion monitoring, as well as security, surveillance and intelligent transportation systems (ITS).

“The PYTHON family delivers a high-speed imaging solution without compromising image quality,” said Chris McNiffe. “A choice of resolutions all supported by a single PCB – plus programmability and numerous features that enhance performance – combine to make the PYTHON family an important addition to the market that will allow designers of industrial image systems to meet the most stringent demands from their customers.”

ON Semiconductor’s patented in-pixel CDS (ipCDS) technology enables global shutter imaging with CDS in a 4.8um pixel size, combining a read noise of 9 e- with 7.7 V/lux sensitivity and frame rates as high as 850fps (VGA). Both new sensors are available in mono, color and extended NIR variants. PYTHON 2000 and PYTHON 5000 are sampling now, with full production expected in Q1 2015.

Caeleste Reports its Yearly Results

Caeleste reports that closed its 2013-2014 fiscal year with a revenue of 2.718 million euros, an increase of 93% over the previous year. The company aims to become an exclusive high-end custom design design house for sensor solutions in the fields of industrial, scientific and medical imaging. Caeleste is now 7 years old and employs 19 people, a growth of 60% over the previous year.

Two Workshops in Toulouse

CNES, Airbus Defense & Space, THALES Alenia Space, SODERN and ISAE organize two workshops in Toulouse, France on November the 26 and 27, 2014. The 3rd edition of the workshop on "Radiation Effects on Optoelectronic Detectors" will be held on November 26 and starts with a tutorial:

How to perform radiation test on optoelectronic detector
Françoise Bezerra, Olivier Gilard, CNES

The regular sessions agenda is:

• Ionizing radiation effects on CCDs over a very wide range of doses
  P. Jerram,E2V technologies, T. Hatsui, RIKEN, A. Holland, XCAM
• Low temperature Total Dose Irradiation of DifferentTransistor Topologies for Infrared Applications
  T. Nuns, J-P. David, S. Soonckindt, ONERA O. Gilard, K. Sanchez, CNES, F. Perrier, S. Ducret, SOFRADIR
• ITAR free rad hard detectors for high reliability applications
  J. Leijtens, Lens Research & Development ESIC, T. Brosowski, First Sensor A.G.
• Gamma Ray and Proton Beam Exposures of Teledyne DALSA 5T Pixel Structures and Outlook for Future Radiation Hard Devices
  O. Cherry, Teledyne Dalsa
• Monte Carlo Transport Code for Image Sensor Radiation Analysis
  C. Inguimbert, T. Nuns, M.C. Ursule, ONERA, D. Hervé, M. Beaumel,SODERN
• Exploring the Kinetics of Formation and Annealing of Single Particle Displacement Damage in Microvolumes of Silicon
  M. Raine, P. Paillet, O. Duhamel, M. Gaillardin, N. Richard, CEA DAM, V. Goiffon, P. Magnan, ISAE, S. Girard, Université Saint-Etienne, C. Virmontois, CNES
• Validation of a Model for Dark Current Non-Uniformity due to Displacement Damage Dose in irradiated CMOS Image Sensors
  J-M. Belloir, V. Goiffon, ISAE Image Sensor Research Team, P. Paillet, M Raine, CEA DAM, C. Virmontois, CNES
• Development of a Cryogenic Irradiation Test Facility and the Results from a CCD236 Swept Charge Device
  J. Gow, P. H. Smith, A. D. Holland, N. J. Murray, The Open University, P. Pool, E2V technologies
• TID and Low energy proton effects on large pitch InGaAs array
  J. Vermeiren, Xenics
• In orbit degradation of frame transfer CCD and other studies on different image sensors
  C. Durnez, V. Goiffon, ISAE Image sensor research team, C. Virmontois, CNES
• Radiation-Induced Dose and Single Event Effects on Digital CMOS Image Sensors
  C. Virmontois, A. Toulemont, G. Rolland, A. Materne, C. Codreanu, C. Durnez, A. Bardoux, CNES, V. Lalucaa, V. Goiffon, ISAE
• Roscosmos facilities for single event effects testing: state-of-the-art and future plans
  P.A. Chubunov, V.S. Anashin, United Rocket Space Corporation, Institute of Space Device Engineering
• Tests results of Russian–made photo-receiving matrix on hardness to the influence of space ionizing radiation
  A.V. Vlasov, V.S. Anashin, P.A. Chubunov, S.A. Yakovlev, United Rocket Space Corporation, Institute of Space Device Engineering
• Single Event Transient and Single Event Upset electrical simulation under Cadence based on MUSCA –SEP current sources in 0,18/0,35 CIS process
  F. Barbier, T. Ligozat, E2V Technologies

Another workshop "Image Sensors Optical Interfaces" is focused on improvement of the capability to collect incident photon is a main driver for image sensors. The workshop agenda for Nov. 27 is:

• Plasmonic filters
  G. Vincent, R. Haidar, ONERA
• Design of plasmonic lenses dedicated to Near Infrared detection (1,064 m) with CMOS image sensors
  T. Lopez,S. Massenot, M. Estribeau, P. Magnan, ISAE, J-L Pelouard, Laboratoire de Photonique et de Nanostructures, LPN-CNRS
• Development of a multispectral infrared focal plane array based on sub-wavelength metal patch arrays
  N. Père-Laperne, P. Le Boterf, L. Rubaldo, D. Joubert-Bousson SOFRADIR, R. Espiau de Lamaestre, M. Brun, N. Rochat, S. Bissotto, A. Perez, CEA, LETI, MINATEC
• REOSC - Multispectral thin film coating on detector - Mozaïc project
  M. Oussalah, SAFRAN
• Interference metal/dielectric filters integrated on CMOS image sensors
  L. Frey, L. Masarotto, J. Raby, P. Parrein, C. Pellé, M. Armand, M-L. Charle, CEA, LETI, MINATEC, M. Marty, S. Lhostis, J. Michailos, E. Mazaleyrat, D. Hérault, STMicroelectronics
• Pixelated Multilayer Thin Film Filters For Multispectral Imagers
  M. Lequime, L. Abel-Tiberini, C. Hecquet, J. Lumeau, Institut Fresnel K. Gasc, J.Loesel, J. Berthon, CNES
• Space environment effects on CMOS microlenses and color filters
  C. Virmontois, C. Codreanu, A. Materne, A. Bardoux, CNES, E. Berdin, M. Bréart de Boisanger, Airbus DS, M. Estribeau, V. Goiffon, ISAE, Image Sensor Reseach Team
• Optimisation of CMOS sensor optical interfaces
  P. Jerram, E2V technologies
• Microlens back-end process using UV polymer replication on CMOS wafers
  P. Dannberg, A. Oelschläger, R. Leitel, H-C. Eckstein, L. Stürzebecher, A.Matthes, P.Schreiber, A. Bräuer, Fraunhofer

Omnivision Announces 20MP+ Stacked Sensors

PRNewswire: OmniVision announces the 1/2.3-inch 23.8MP OV23850 and 1/2.4-inch 21.4MP OV21840, a family of PureCel-S stacked sensors for the next generation of flagship smartphones.

"Industry experts anticipate that 20+ megapixel image sensors will be the next popular resolution threshold for flagship smartphones in 2015. The OV23850 and OV21840 are designed to facilitate the adoption of this resolution range by smartphone OEMs," said Harish Iyer, senior product marketing manager at OmniVision. "We see the megapixel race in the smartphone segment as heating up, with flagship smartphones reaching toward not only DSC-comparable resolutions, but also advanced features such as fast autofocus, HDR mode, burst mode and slow motion video that today are characteristically restricted to DSCs. The OV23850 and OV21840 can provide OEMs with the opportunity to make the full range of these advanced capabilities a reality for their new flagship devices."

The stacked technology is said to enable additional sensor functionalities, such as phase detection autofocus (PDAF), two-dimensional contrast fast autofocus and HDR video, while maintaining a small footprint. OmniVision plans to combine the two-dimensional contrast-based fast autofocus, which is up to 4x faster than traditional contrast autofocus, with PDAF to offer an optimized hybrid fast autofocus function.

The 23.8MP OV23850 can capture images at 24 fps speed, while 21.4MP OV21840 supports 27 fps speed at full resolution. Both are capable of recording quad high definition (QHD) video at 30 fps in HDR mode to enable 'always on' HDR preview mode for a resolution size popular with flagship smartphone displays. Additionally, the sensors support 720p120 and 1080p90 video modes.

The OV23850 and OV21840 fit into 10.5 x 10.5 mm modules with z-heights of 6.3 and 6 mm, respectively. Both sensors are currently sampling and are expected to enter volume production in Q1 2015.

Peter Thiel Invests in PixelPlus

Korea Economic Daily reports that Peter Thiel, one of the legendary Silicon Valley investors and a former PayPal CEO, has acquired 3% stake in Korean image sensor maker PixelPlus. Reportedly, he paid 10 billion won (about $9.3M) , putting the company valuation at about 330 billion won, or $310M. Analysts expect the company value to jump to 500 billion won next year when it is to make IPO on the KOSDAQ. Pixelplus founder and president Lee Seo-gyu is said to own 24.4% stake in the company.

Pixelplus posted 149.4 billion won in sales revenue and 46.5 billion won in operating profit last year.

Caeleste Presents Cryogenic ROIC

Caeleste paper and presentation "Cryogenic and Radiation-Hard ASIC for Interfacing Large Format NIR/SWIR Detector Arrays" by Peng Gao, Benoit Dupont, Bart Dierickx, Eric Müller, Geert Verbruggen, Stijn Gielis, Ramses Valvekens, presented at ICSO 2014, Tenerife, Spain, talks about the challenges to make circuit work at liquid nitrogen temperature, among other things:

Sony Reports Image Sensor Sales Growth, Updates Forecast

Sony reports quarterly image sensor sales increase and updates its FY 2014 sales forecasts (Sony fiscal year ends on March 31, 2015):

Google Trends on Image Sensors

Google Trends tracks the number of search on different keywords over time. This might be an indication of general public interest in different things. Searches for "image sensor" and related terms seem to be fairly constant over the last 5 years after a peaking in 2004 (marked as 100% on the graphs):