Tuesday, February 09, 2021

NIT Announces Novel Stacking Technology for InGaAs to ROIC Bonding

New Imaging Technologies announces the release of several new SWIR sensors now produced with NIT in-house designed stacking technology, internally named NH.

The NH technology allows to stack a photodiode array (PDA) of InGaAs to a CMOS ROIC at pixel level. The NH technology does not rely on the classical Indium bump hybridization technique, therefore improving the manufacturing yield and lowering the sensor cost.

The VGA line of SWIR products with 15µm pitch is already in full production since several years using the NH technology.  New products with higher resolution and lower pitch from 10µm down to 7.5µm are currently under qualification, such as an HD array (1280×1024 pixels @ 10µm)

The roadmap towards very small pitch <5µm and Full HD+ formats is under construction at NIT.


  1. How does this compare to Sony?

    1. SONY uses Cu-Cu oxide bonding which has been proved as a cheap, reliable and precise pixel-pixel connection method. Their InGaAs sensor has very few defect pixels.

      If it's for small workshop-like product, you have plenty of solutions. Indium connection is used in cooled IR detectors, becuase they should be placed at 77K otherwise this is no need for indium connection.

  2. History of human kind: give more importance to the size rather than to the use :)


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