The new 8MP image sensor is said to achieve 125% higher sensitivity per unit area as compared with 1.4um FSI pixel sensor [probably meant to be 25% improvement, rather than 125%]. The "partially introduced" 40nm process helps to increase the PD area and achive 118% saturation charge per unit area. The sensor also features "optimization of the transistor sharing method and photodiode isolating structure" to increase speed and reduce crosstalk and noise.
The 8MP sensor has a speed of 30fps at full resolution or 60fps in 1080p video mode. It also includes HDR function. This description appears to be close to the previously announced T4K05 spec.
40nm seems expensive, is it better than OMNI and SONY BSI based on design rules.
ReplyDeleteOVT uses 65nm, and Sony uses 90nm.
ReplyDelete"Partially introduced" suggests taking the front-end process from an existing line, e.g. for memory, but still running lower cost process technology on the back-end-of-line.
ReplyDeleteInteresting as for it would have been the other way around : low cost front end, newer back end. Narrow metals are important for FSI active area.
ReplyDeleteYou are right, but this is BSI !
ReplyDeleteGood front end photolith is critical to achieve small pitch.
ReplyDelete