Friday, May 05, 2017

TSMC Proposes Storage Node Screen for BSI GS Pixel

TSMC patent application US20170117315 "Back-side illuminated (BSI) image sensor with global shutter scheme" by Chun-yuan Chen, Ching-chun Wang, Dun-nian Yaung, Shyh-fann Ting, Wei Chuang Wu, Yen-ting Chiang, and Kuan-tsun Chen proposes a light reflector to protect storage node from light, a tough challenge in BSI GS pixels. The reflecting element is shown as 108 on the figure 3 below:

Posted by Vladimir Koifman at 13:50

4 comments:

  1. AnonymousMay 5, 2017 at 6:39 PM

    But in this case, the fill factor is largely reduced.

    ReplyDelete
    Replies
    1. AnonymousMay 7, 2017 at 12:45 AM

      Why is that? The reflective material has an aperture which still allows light to reach the sensing element.

      Delete
  2. AnonymousMay 10, 2017 at 3:59 AM

    What kinds of benefit on this type BSI GS Pixel?

    ReplyDelete
    Replies
    1. AnonymousMay 24, 2017 at 11:50 PM

      With back side thinned sensors the storage node is susceptible to noise from light exposure. The reflector over storage node lowers the noise.

      Delete

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