Minimal Fab process implements most of the steps needed for image sensor production, even a wafer thinning and bonding option. The most notable omission is a high energy ion implantation. So far, only lower than 50KeV implantation is supported. For a higher energy, one needs to process wafers at the large fab.
AIST presents Minimal Fab advantages:
There is a similar Futrfab work in the US promoting 2-inch wafer fab. However, its progress appears to be slow and it is far from being a market-ready solution for now.
Fab investment typo in the slide? 0.5M$ or 0.5B$?
ReplyDeleteNot a typo. This is their claim to fame.
DeleteBut elsewhere they cite a facilities cost of 0.5 to 3 billion yen ($5-25 Million)
Deletehttps://cdn.aff.yokogawa.com/9/400/details/minimal-fab-one-stop-solution.pdf
What kind of direct pattern inscription used in this system ?
ReplyDeleteThey have two options. One is an optical projector with resolution of about 1um. The second one is an ebeam direct writing system with resolution of 100nm. Maybe there is something else that I don't know about.
Deletehow do you think about this minimal fab concept? will it gain any market share?
ReplyDeleteI don't know for Silicon industry but something similar (2 inch wafer, 1-5 M€, 1µm resolution) for III-V materials would definitely be interesting for many applications and companies.
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