Recently, NIT has been awarded with a large funding program by the French Government for improving and industrializing its in-house hybridization technology, paving the way to very small infrared sensor pitch. The so called NH technology allows to perform a 3D stack of a read out circuit with a photodiode array without using the traditional Indium bump bonding technique. The NH yield is extremely high and with this investment program it is expected to reach pixel pitch of less than 5um.
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