Friday, December 01, 2017

X-FAB Unveils MOSFETs with 10x Lower 1/f Noise

X-FAB announces the expansion of its 180 nm XH018 mixed-signal CMOS process with three new transistors: a 1.8 V low-noise NMOS, a 3.3 V low-noise NMOS and a 3.3 V low-noise PMOS – all of which offer drastically reduced flicker noise compared to standard CMOS offerings.

The new 1.8 V low-noise NMOS transistor introduced by X-FAB delivers an improvement factor of eight times lower flicker noise compared to the standard XH018 device. The new 3.3 V low-noise NMOS transistor gives up to ten times lower flicker noise, while the flicker noise for the 3.3 V low-noise PMOS transistor that complements it is halved for all drain currents.

Although XH018 process is not an image sensor process, it offers a photodiode module. It's not immediately clear whether the new transistors can be used in X-FAB's XS018 180nm image sensor-dedicated process.

Luigi Di Capua, Director Marketing at X-FAB, commented: “X-FAB has been setting the benchmark for low-noise performance in its 350 nm technology for many years. We are proud to now also offer industry-leading low-noise devices via our 180 nm XH018 platform. By adding just one extra mask layer, all three ultra-low-noise transistors can be incorporated into noise-sensitive circuit designs.

1 comment:

  1. Hello, Vladimir,

    Thank you very much for highlighting X-FAB's newly released low noise CMOS offering.
    The new transistors are not available for XS018 yet, but we are planning to offer them on XS018 as well.

    Best regards


All comments are moderated to avoid spam and personal attacks.