Saturday, January 06, 2018

4T Pixel with Reverse Substrate Bias

MDPI Special Issue on 2017 International Image Sensor Workshop publishes UK Open University paper "Design and Performance of a Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias" by Konstantin Stefanov, Andrew Clarke, James Ivory, and Andrew Holland. The paper presents a scheme of pixel implants to extend the depletion and improve IR QE:

"The sensor uses traditional PPDs with one additional deep implantation step to suppress the parasitic reverse currents, and can be fully depleted. The first prototypes have been manufactured on an 18 µm thick, 1000 Ω·cm epitaxial silicon wafers using 180 nm PPD image sensor process. Both front-side illuminated (FSI) and back-side illuminated (BSI) devices were manufactured in collaboration with Teledyne e2v. The characterization results from a number of arrays of 10 µm and 5.4 µm PPD pixels, with different shape, the size and the depth of the new implant are in good agreement with device simulations. The new pixels could be reverse-biased without parasitic leakage currents well beyond full depletion, and demonstrate nearly identical optical response to the reference non-modified pixels. The observed excessive charge sharing in some pixel variants is shown to not be a limiting factor in operation. This development promises to realize monolithic PPD CIS with large depleted thickness and correspondingly high quantum efficiency at near-infrared and soft X-ray wavelengths."

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