Saturday, January 27, 2018

TPSCo 2.8um Global Shutter Pixel

MDPI Special Issue on the 2017 International Image Sensor Workshop publishes TowerJazz-Panasonic paper "Development of Low Parasitic Light Sensitivity and Low Dark Current 2.8 μm Global Shutter Pixel" by Toshifumi Yokoyama, Masafumi Tsutsui, Masakatsu Suzuki, Yoshiaki Nishi, Ikuo Mizuno, and Assaf Lahav. This is probably the smallest size GS pixel offered as a silicon proven IP.

"We developed a low parasitic light sensitivity (PLS) and low dark current 2.8 μm global shutter pixel. We propose a new inner lens design concept to realize both low PLS and high quantum efficiency (QE). 1/PLS is 7700 and QE is 62% at a wavelength of 530 nm. We also propose a new storage-gate based memory node for low dark current. P-type implants and negative gate biasing are introduced to suppress dark current at the surface of the memory node. This memory node structure shows the world smallest dark current of 9.5 e−/s at 60 °C."


  1. I thought TJ and Panasonic collaboration focused on organic film sensors? Are they also doing silicon sensors as well?

    1. They never focused on organic sensors in a joint venture. Organic sensors are explored by another division of panasonic

  2. I think this paper was already published at IISW-2017:
    it seems there were 3 papers about this pixel there: R08, R56, R58

    As far as I know, this pixel is licensed by e2v ("Emerald") and Gpixel ("Gmax") and already available in products.

    the next step will be a 2.5u pixel, as reported on this blog:

  3. Albert Theuwissen - Harvest ImagingJanuary 28, 2018 at 9:43 AM

    This paper is indeed published before at IISW2017. But this MDPI publication is a special issue based on (about) 20 papers presented at IISW2017. So it is not surprising you find the paper here again.

  4. From the schematic, it seems as though Qsat might be quite low. Has anyone seen a Qsat number for this pixel?


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