"Many new imaging and optical sensor applications, which are now in the stage of being deployed into mass applications like TOF, LiDAR or spectroscopy, suffer from very poor NIR sensitivity and non-existent or limited charge handling capacity as well as imaging speed. TOF and LiDAR applications need time resolving capabilities as fast as 100ps with very high sensitivity in the NIR domain. Our technology with a QE of more than 70% at 905nm allows best-in-class imaging in this specific application domain.
The cornerstones of the novel OHC15L imager technology are an unprecedented sensitivity in the NIR (>70% @ 905nm), CCD’s with a CTE of 0.99999 at a transfer speed of more than 250MHz, all combined with powerful mixed signal CMOS and in a cost effective package."
Conventional CMOS at 50% peak QE? Seems like false advertisement...
ReplyDeleteIn my opinion every comparison with other devives/technologies WITHOUT making reference to which devices the comparison is made, does not make sense at all.
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