Leakage Non-Uniformity and RTN

MDPI paper "Leakage Current Non-Uniformity and Random Telegraph Signals in CMOS Image Sensor Floating Diffusions Used for In-Pixel Charge Storage" by by Alexandre Le Roch, Vincent Goiffon, Olivier Marcelot, Philippe Paillet, Federico Pace, Jean-Marc Belloir, Pierre Magnan, and Cédric Virmontois from Université de Toulouse, CEA, and Centre Nationale d’Etudes Spatiales (CNES), France belongs to Special Issue "Special issue on the 2019 International Image Sensor Workshop (IISW2019)"

"The leakage current non-uniformity, as well as the leakage current random and discrete fluctuations sources, are investigated in pinned photodiode CMOS image sensor floating diffusions. Different bias configurations are studied to evaluate the electric field impacts on the FD leakage current. This study points out that high magnitude electric field regions could explain the high floating diffusion leakage current non-uniformity and its fluctuation with time called random telegraph signal. Experimental results are completed with TCAD simulations allowing us to further understand the role of the electric field in the FD leakage current and to locate a high magnitude electric field region in the overlap region between the floating diffusion implantation and the transfer gate spacer."